Semiconductor device, display device, and electronic appliance

ABSTRACT

To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device. Further, thepresent invention relates to a display device. Furthermore, the presentinvention relates to an electronic appliance including a display devicein a display portion.

2. Description of the Related Art

Various metal oxides are used for a variety of applications. Forexample, indium oxide is a well-known material and used for a materialof a transparent electrode which is needed in a liquid crystal displayor the like.

Some metal oxides have semiconductor characteristics. As metal oxidesexhibiting semiconductor characteristics, for example, tungsten oxide,tin oxide, indium oxide, zinc oxide, and the like can be given.References disclose a thin film transistor in which such a metal oxideexhibiting semiconductor characteristics is used for a channel formationregion (Patent Documents 1 to 4, and Non-Patent Document 1).

Further, not only unitary oxides but also multiple oxides are known asmetal oxides. For example, InGaO₃(ZnO)_(m) (m is a natural number)belonging to homologous series has been known as a multi-component oxidesemiconductor including In, Ga, and Zn (Non-Patent Documents 2 to 4).

In addition, it has been confirmed that an oxide semiconductor includingsuch an In—Ga—Zn-based oxide can be used as a channel layer of a thinfilm transistor (Patent Document 5, and Non-Patent Documents 5 and 6).

A TFT in which a channel formation layer is formed using an oxidesemiconductor has a higher electric field mobility than a TFT usingamorphous silicon.

TFTs which are formed using such an oxide semiconductor over a glasssubstrate, a plastic substrate, or the like are expected to be appliedto display devices such as a liquid crystal display, anelectroluminescence display (also referred to as an EL display), andelectronic paper.

A semiconductor device such as a display device has a problem in thatmalfunction occurs or a circuit in a display device is damaged due tonoise.

Examples of the noise include conductive noise, emission noise, and thelike. Examples of the conductive noise include a high-speed burst waveand the like. Examples of the emission noise include electrostaticdischarge and the like.

In order to reduce adverse effects of the noise, display devicesprovided with a variety of protective means against noise have beenproposed (Patent Document 6).

REFERENCES

-   [Patent Document 1] Japanese Published Patent Application No.    S60-198861-   [Patent Document 2] Japanese Published Patent Application No.    H8-264794-   [Patent Document 3] Japanese Translation of PCT International    Application No. H11-505377-   [Patent Document 4] Japanese Published Patent Application No.    2000-150900-   [Patent Document 5] Japanese Published Patent Application No.    2004-103957-   [Patent Document 6] Japanese Published Patent Application No.    H11-150275

Non-Patent Document

-   [Non-Patent Document 1] M. W. Prins, K. O. Grosse-Holz, G.    Muller, J. F. M. Cillessen, J. B. Giesbers, R. P. Weening, and R. M.    Wolf, “A ferroelectric transparent thin-film transistor”, Appl.    Phys. Lett., 17 Jun. 1996, Vol. 68, pp. 3650-3652-   [Non-Patent Document 2] M. Nakamura, N. Kimizuka, and T. Mohri, “The    Phase Relations in the In₂O₃—Ga₂ZnO₄—ZnO System at 1350° C.”, J.    Solid State Chem., 1991, Vol. 93, pp. 298-315-   [Non-Patent Document 3] N. Kimizuka, M. Isobe, and M. Nakamura,    “Syntheses and Single-Crystal Data of Homologous Compounds,    In₂O₃(ZnO)_(m) (m=3, 4, and 5), InGaO₃(ZnO)₃, and Ga₂O₃(ZnO)_(m)    (m=7, 8, 9, and 16) in the In₂O₃—ZnGa₂O₄—ZnO System”, J. Solid State    Chem., 1995, Vol. 116, pp. 170-178-   [Non-Patent Document 4] M. Nakamura, N. Kimizuka, T. Mohri, and M.    Isobe, “Syntheses and crystal structures of new homologous compound,    indium iron zinc oxides (InFeO₃(ZnO)_(m) (m: natural number) and    related compounds”, KOTAI BUTSURI (SOLID STATE PHYSICS), 1993, Vol.    28, No. 5, pp. 317-327-   [Non-Patent Document 5] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M.    Hirano, and H. Hosono, “Thin-film transistor fabricated in    single-crystalline transparent oxide semiconductor”, SCIENCE, 2003,    Vol. 300, pp. 1269-1272-   [Non-Patent Document 6] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M.    Hirano, and H. Hosono, “Room-temperature fabrication of transparent    flexible thin-film transistors using amorphous oxide    semiconductors”, NATURE, 2004, Vol. 432, pp. 488-492

SUMMARY OF THE INVENTION

It is an object of one embodiment of the present invention to reduceadverse effects on actual operation and to reduce adverse effects ofnoise.

One embodiment of the present invention is to include a capacitor formedusing a conductive layer to be a terminal electrode or a wiring, anoxide semiconductor layer, and an insulating layer, and to reduceadverse effects of noise by filtering with the use of a filter circuitformed using the capacitor and a resistor.

One embodiment of the present invention is a semiconductor deviceincluding a terminal electrode, a wiring electrically connected to theterminal electrode, an oxide semiconductor layer overlapping with theterminal electrode in a plane view, an insulating layer provided betweenthe terminal electrode and the oxide semiconductor layer in across-sectional view, and a functional circuit to which a signal isinputted from the terminal electrode through the wiring and in whichoperation is controlled in accordance with the signal inputted.

One embodiment of the present invention is a semiconductor deviceincluding a terminal electrode, a wiring electrically connected to theterminal electrode, an oxide semiconductor layer overlapping with thewiring in a plane view, an insulating layer provided between the wiringand the oxide semiconductor layer in a cross-sectional view, and afunctional circuit to which a signal is inputted from the terminalelectrode through the wiring and in which operation is controlled inaccordance with the signal inputted.

In the embodiment of the present invention, power supply voltage may beapplied to the oxide semiconductor layer.

One embodiment of the present invention is a semiconductor deviceincluding a terminal electrode, a first wiring, a second wiringelectrically connected to the terminal electrode, an oxide semiconductorlayer which is electrically connected to the second wiring and whichoverlaps with the first wiring in a plane view, an insulating layerprovided between the first wiring and the oxide semiconductor layer in across-sectional view, and a functional circuit to which a signal isinputted from the terminal electrode through the second wiring and inwhich operation is controlled in accordance with the signal inputted.

In the embodiment of the present invention, power supply voltage may beapplied to the first wiring.

In the embodiment of the present invention, the functional circuit caninclude a semiconductor element using an oxide semiconductor layer.

One embodiment of the present invention is a display device including asubstrate, a wiring provided over the substrate, a first insulatinglayer provided over the substrate with the wiring interposedtherebetween, a first oxide semiconductor layer provided over the firstinsulating layer, a second insulating layer provided over the firstinsulating layer with the oxide semiconductor layer interposedtherebetween, a terminal electrode which is provided over the secondinsulating layer and is electrically connected to the wiring through anopening portion provided in the first insulating layer and the secondinsulating layer, a driver circuit to which a signal is inputted fromthe terminal electrode through the wiring and in which operation iscontrolled in accordance with the signal inputted, and a pixel whoseoperation is controlled by the driver circuit. In addition, in theembodiment, the driver circuit and the pixel each include a transistor,and the transistor includes a gate electrode provided over thesubstrate, a gate insulating layer provided over the substrate with thegate electrode interposed therebetween, a source electrode and a drainelectrode which are provided over the gate insulating layer, a secondoxide semiconductor layer which is provided over the gate electrode withthe gate insulating layer interposed therebetween and is provided overthe gate insulating layer with the source electrode and the drainelectrode interposed therebetween, a protective layer provided over thegate insulating layer with the source electrode, the drain electrode,and the second oxide semiconductor layer interposed therebetween, and anelectrode which is provided over the protective layer and iselectrically connected to one of the source electrode and the drainelectrode through an opening portion provided in the protective layer.

In the embodiment of the present invention, the first oxidesemiconductor layer can be provided over the wiring with the firstinsulating layer interposed therebetween.

In the embodiment of the present invention, the terminal electrode canbe provided over the first oxide semiconductor layer with the secondinsulating layer interposed therebetween.

In the embodiment of the present invention, the first insulating layercan be in a same layer as the gate insulating layer, and the secondinsulating layer can be in a same layer as the protective layer.

One embodiment of the present invention is an electronic applianceincluding the above-described display device in a display portion.

One embodiment of the present invention is a method for manufacturing adisplay device including the steps of forming a first conductive filmover a substrate and selectively etching the first conductive film toform a first conductive layer and a second conductive layer; forming afirst insulating layer over the substrate with the first conductivelayer and the second conductive layer interposed therebetween andselectively etching the first insulating layer to expose part of thefirst conductive layer; forming a second conductive film over the firstinsulating layer and selectively etching the second conductive film toform a third conductive layer and a fourth conductive layer; forming anoxide semiconductor film over the first insulating layer with the thirdconductive layer and the fourth conductive layer interposed therebetweenand selectively etching the oxide semiconductor film to form a firstoxide semiconductor layer over the first insulating layer and to form asecond oxide semiconductor layer over the second conductive layer withthe second conductive layer, the third conductive layer, and the fourthconductive layer interposed therebetween; forming a second insulatinglayer over the first insulating layer with the third conductive layer,the fourth conductive layer, the first oxide semiconductor layer, andthe second oxide semiconductor layer interposed therebetween andselectively etching the second insulating layer to expose part of thefirst conductive layer and part of the fourth conductive layer; andforming a third conductive film over the exposed part of the firstconductive layer, the exposed part of the fourth conductive layer, andthe second insulating layer and selectively etching the third conductivefilm to form a fifth conductive layer which is electrically connected tothe first conductive layer and has a function as a terminal electrodeand to form a sixth conductive layer electrically connected to thefourth conductive layer.

In the embodiment of the present invention, the first oxidesemiconductor layer may be formed over the wiring with the firstinsulating layer interposed therebetween.

In the embodiment of the present invention, the terminal electrode maybe formed over the oxide semiconductor layer with the second insulatinglayer interposed therebetween.

According to one embodiment of the present invention, adverse effects onactual operation can be reduced and adverse effects of noise can bereduced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B illustrate an example of a structure of a semiconductordevice in Embodiment 1.

FIGS. 2A and 2B illustrate an example of a structure of thesemiconductor device in Embodiment 1.

FIGS. 3A and 3B illustrate an example of a structure of thesemiconductor device in Embodiment 1.

FIGS. 4A and 4B illustrate an example of a structure of thesemiconductor device in Embodiment 1.

FIGS. 5A and 5B illustrate an example of a structure of thesemiconductor device in Embodiment 1.

FIGS. 6A and 6B illustrate an example of a structure of thesemiconductor device in Embodiment 1.

FIGS. 7A and 7B illustrate an example of a structure of thesemiconductor device in Embodiment 1.

FIGS. 8A and 8B are circuit diagrams illustrating equivalent circuits ofthe semiconductor devices illustrated in FIGS. 1A and 1B, FIGS. 2A and2B, FIGS. 3A and 3B, FIGS. 4A and 4B, FIGS. 5A and 5B, FIGS. 6A and 6B,and FIGS. 7A and 7B.

FIG. 9 is a graph illustrating the inspection result ofvoltage-capacitance characteristics of a capacitor in Embodiment 1.

FIG. 10 is a circuit diagram illustrating a circuit model of a filtercircuit whose function is to be inspected in Embodiment 1.

FIGS. 11A and 11B are graphs illustrating input/output characteristicsof the case where a first digital signal is inputted in inspecting acircuit model illustrated in FIG. 10 by calculation.

FIGS. 12A and 12B are graphs illustrating input/output characteristicsof the case where a second digital signal is inputted in inspecting acircuit model illustrated in FIG. 10 by calculation.

FIGS. 13A and 13B are graphs illustrating input/output characteristicsof the case where a third digital signal is inputted in inspecting acircuit model illustrated in FIG. 10 by calculation.

FIG. 14 illustrates an example of a structure of a display device inEmbodiment 2.

FIGS. 15A and 15B are circuit diagrams each illustrating an example ofthe circuit configuration of a pixel of the display device illustratedin FIG. 14.

FIGS. 16A and 16B are cross-sectional views each illustrating an exampleof a structure of a transistor in a pixel of the display deviceillustrated in FIG. 14.

FIG. 17 is a cross-sectional view illustrating an example of a structureof a transistor in a pixel of the display device illustrated in FIG. 14.

FIGS. 18A and 18B are block diagrams each illustrating a structure of adriver circuit of the display device illustrated in FIG. 14.

FIGS. 19A and 19B illustrate an example of a structure of a terminalportion of the display device illustrated in FIG. 14.

FIGS. 20A and 20B are cross-sectional views illustrating an example of amethod for manufacturing a terminal portion and a semiconductor elementportion of a display device in Embodiment 3.

FIGS. 21A and 21B are cross-sectional views illustrating an example of amethod for manufacturing a terminal portion and a semiconductor elementportion of the display device in Embodiment 3.

FIGS. 22A and 22B are cross-sectional views illustrating an example of amethod for manufacturing a terminal portion and a semiconductor elementportion of the display device in Embodiment 3.

FIGS. 23A and 23B illustrate an example of a structure of alight-emitting panel in Embodiment 4.

FIGS. 24A1, 24A2, and 24B illustrate examples of a structure of a liquidcrystal panel in Embodiment 4.

FIG. 25 illustrates an example of a liquid crystal display module inEmbodiment 4.

FIG. 26 is a cross-sectional view illustrating an example of a structureof electronic paper in Embodiment 5.

FIG. 27 illustrates an example of a structure of an e-book reader inEmbodiment 5.

FIGS. 28A and 28B illustrate examples of a structure of an electronicappliance in Embodiment 6.

FIGS. 29A and 29B illustrate examples of a structure of the electronicappliance in Embodiment 6.

FIGS. 30A and 30B illustrate examples of a structure of the electronicappliance in Embodiment 6.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will be described below withreference to accompanying drawings. However, the present invention isnot limited to the description given below, and it will be readilyapparent to those skilled in the art that various changes andmodifications in modes and details thereof can be made without departingfrom the purpose and scope of the present invention. Therefore, thepresent invention should not be interpreted as being limited to thedescription of Embodiments given below.

Embodiment 1

In Embodiment 1, a semiconductor device which is an embodiment of thepresent invention is described.

An example of a structure of a semiconductor device in Embodiment 1 isdescribed with reference to FIGS. 1A and 1B. FIGS. 1A and 1B illustratethe example of the structure of the semiconductor device inEmbodiment 1. FIG. 1A is a top view and FIG. 1B is a cross-sectionalview taken along line A1-A2 of FIG. 1A.

The semiconductor device illustrated in FIGS. 1A and 1B includes asubstrate 100, an electrode 101, a wiring 102, a functional circuit 103,and an oxide semiconductor layer 104 as illustrated in FIG. 1A, andfurther includes an insulating layer 106 and an insulating layer 107 asillustrated in FIG. 1B.

As illustrated in FIG. 1B, the wiring 102 is provided over the substrate100; the insulating layer 106 is provided over the substrate 100 withthe wiring 102 interposed therebetween; the oxide semiconductor layer104 is provided over the insulating layer 106; and the insulating layer107 is provided over the insulating layer 106 with the oxidesemiconductor layer 104 interposed therebetween.

Note that when it is described that “A is provided over B” in thisspecification, it does not necessarily mean that B is provided over andin direct contact with A unless otherwise specified. For example, thecase where another object is interposed between A and B in thecross-sectional view is also included. Here, each of A and B correspondsto an object (e.g., a device, an element, a circuit, a wiring, anelectrode, a terminal, a film, or a layer).

Similarly, when it is described that “A is provided under B”, it doesnot necessarily mean that A is provided under and in direct contact withB, and, for example, the case where another object is interposed betweenA and B in the cross-sectional view is also included.

The electrode 101 is electrically connected to the wiring 102 via anopening portion 105 provided in the insulating layer 106 and theinsulating layer 107. The electrode 101 has a function as a terminalelectrode of the semiconductor device. The terminal electrode can have afunction as a terminal to which a signal is inputted from outside (sucha terminal is also referred to as a signal input terminal), a terminalto which a power is supplied (such a terminal is also referred to as apower supply terminal), or a terminal used as a connection portion withanother element, another circuit, or the like (such a terminal is alsoreferred to as a connection terminal). The electrode 101 can be formedusing a conductive material, for example.

The wiring 102 can be formed using a conductive material, for example.

The functional circuit 103 is a circuit having a given function. Forexample, a signal is inputted via the electrode 101 and the wiring 102to the functional circuit 103, and, in accordance with the signalinputted, the operation of the functional circuit 103 is controlled. Forexample, voltage is applied to the functional circuit 103 via theelectrode 101 and the wiring 102. The functional circuit 103 can beformed using an electronic circuit including a semiconductor element,for example. Further, the semiconductor element can be formed using anoxide semiconductor material, for example. Some oxide semiconductormaterials have a light-transmitting property, and have mobility higherthan amorphous silicon or the like, for example.

Note that in general, voltage refers to the difference betweenpotentials of two points (also referred to as the potential difference),and a potential refers to the amount of work which is needed fortransferring a unit charge from one point to another point in anelectric field. However, in an electric circuit, even when only onepoint is used, the potential difference between a potential at the onepoint and a potential serving as a reference (also referred to as areference potential) is sometimes used as a value in a circuit diagramor the like, for example. Moreover, both the level of voltage and thevalue of a potential are represented by volts (V) in a circuit diagramor the like in some cases; therefore, it is difficult to distinguishthem. Thus, in the document (the specification and the scope of claims)of the present application, the phrase “voltage at one point” refers toa potential difference between the one point and a reference potentialunless otherwise specified.

As power supply voltage, voltage on the comparatively high voltage sideor voltage on the comparatively low voltage side can be used, forexample. Power supply voltage on the high voltage side is referred to ashigh power supply voltage (also referred to as V_(dd)), and power supplyvoltage on the low voltage side is referred to as low power supplyvoltage (also referred to as V_(ss)). Further, a ground potential can beused as the high power supply voltage or the low power supply voltage.For example, in the case where a ground potential is used as the highpower supply voltage, the low power supply voltage is voltage lower thanthe ground potential, and in the case where a ground potential is usedas the low power supply voltage, the high power supply voltage isvoltage higher than the ground potential.

For the oxide semiconductor layer 104, an oxide semiconductor materialcan be used, for example. Therefore, in the case where a semiconductorelement using an oxide semiconductor material is applied to thefunctional circuit 103, for example, it is possible to form asemiconductor layer used for the semiconductor element of the functionalcircuit 103 and the oxide semiconductor layer 104 by selective etchingof a semiconductor film formed using the same oxide semiconductormaterial (such a semiconductor film is also referred to as an oxidesemiconductor film), so that the semiconductor layer used for thesemiconductor element of the functional circuit 103 and the oxidesemiconductor layer 104 are formed in the same layer. Thus, the oxidesemiconductor layer 104 can be formed without increasing the number ofsteps.

As the oxide semiconductor film, an oxide semiconductor film includingany of Sn, In, or Zn can be used, for example. Further, in the casewhere an oxide semiconductor film is used, an oxide semiconductor filmincluding an amorphous component can be used. Furthermore, an oxidesemiconductor film including a crystal grain (also referred to asnanocrystal) can be used. At this time, the crystal grain (also referredto as nanocrystal) in the oxide semiconductor film has a diameter of 1nm to 10 nm, typically approximately 2 nm to 4 nm.

As the oxide semiconductor, an oxide semiconductor having a structurerepresented by InMO₃(ZnO)_(m) (m>0) can be alternatively used, forexample. Note that M represents one or more of metal elements selectedfrom gallium (Ga), iron (Fe), nickel (Ni), manganese (Mn), or cobalt(Co). As an example, M may be Ga or may include the above metal elementin addition to Ga; for example, M may be Ga and Ni, or Ga and Fe.Moreover, in the above oxide semiconductor, in some cases, a transitionmetal element such as Fe or Ni or an oxide of the transition metal iscontained as an impurity element in addition to a metal elementcontained as M. In this specification, among the oxide semiconductorswhose composition formulas are represented by InMO₃(ZnO)_(m) (m>0), anoxide semiconductor whose composition formula includes at least Ga as Mis referred to as an In—Ga—Zn—O-based oxide semiconductor, and a thinfilm of the In—Ga—Zn—O-based oxide semiconductor is also referred to asan In—Ga—Zn—O-based non-single-crystal film.

As the oxide semiconductor film, any of the following oxidesemiconductor films can be applied as well as the above: anIn—Sn—Zn—O-based oxide semiconductor film; an Al—In—Zn—O-based oxidesemiconductor film; a Ga—Sn—Zn—O-based oxide semiconductor film; anAl—Ga—Zn—O-based oxide semiconductor film; an Al—Sn—Zn—O-based oxidesemiconductor film; an In—Zn—O-based oxide semiconductor film; aSn—Zn—O-based oxide semiconductor film; an Al—Zn—O-based oxidesemiconductor film; an In—O-based oxide semiconductor film; a Sn—O-basedoxide semiconductor film; and a Zn—O-based oxide semiconductor film.

As illustrated in FIGS. 1A and 1B as an example, the semiconductordevice of Embodiment 1 includes a capacitor formed using an oxidesemiconductor layer, a conductive layer which forms a wiring or anelectrode, and an insulating layer provided between the oxidesemiconductor layer and the conductive layer. This capacitor has afunction as part of a protection circuit. Further, this capacitor has afunction as part of a filter circuit for reducing the adverse effects ofnoise.

In FIGS. 1A and 1B, as an example, a semiconductor device having astructure in which, in the plane view, the oxide semiconductor layer 104overlaps with the electrode 101 and the oxide semiconductor layer 104overlaps with the wiring 102 is described. However, the structure of asemiconductor device is not limited to the structure illustrated inFIGS. 1A and 1B, and other structures can be applied to thesemiconductor device of Embodiment 1. Another example of the structureof the semiconductor device in Embodiment 1 is described with referenceto FIGS. 2A and 2B. FIGS. 2A and 2B are schematic views illustrating theexample of the structure of the semiconductor device in Embodiment 1.FIG. 2A is a top view and FIG. 2B is a cross-sectional view taken alongline A1-A2 of FIG. 2A.

A semiconductor device illustrated in FIGS. 2A and 2B includes theelectrode 101, the wiring 102, the functional circuit 103, the oxidesemiconductor layer 104, and a wiring 108 as illustrated in FIG. 2A, andfurther includes the insulating layer 106 and the insulating layer 107as illustrated in FIG. 2B.

As illustrated in FIG. 2B, the wiring 102 is provided over the substrate100; the insulating layer 106 is provided over the substrate 100 withthe wiring 102 interposed therebetween; the oxide semiconductor layer104 is provided over the insulating layer 106; the wiring 108 isprovided over the insulating layer 106; the insulating layer 107 isprovided over the insulating layer 106 with the oxide semiconductorlayer 104 and the wiring 108 interposed therebetween; and the electrode101 is provided over the insulating layer 107. That is, a structure inwhich, in the plane view, the oxide semiconductor layer 104 overlapswith the wiring 102 is obtained as illustrated in FIG. 2A.

The wiring 108 is electrically connected to the oxide semiconductorlayer 104 and the electrode 101 is electrically connected to the wiring108.

A signal is inputted to the functional circuit 103 via the electrode 101and the wiring 108, and, in accordance with the signal inputted, theoperation of the functional circuit 103 is controlled. Alternatively,voltage is applied to the functional circuit 103 via the electrode 101and the wiring 108.

Note that the description of the other components of the semiconductordevice illustrated in FIGS. 2A and 2B is the same as the description ofcorresponding components of the semiconductor device illustrated inFIGS. 1A and 1B. Therefore, the description of the correspondingcomponents of the semiconductor device illustrated in FIGS. 1A and 1B isapplied thereto as appropriate.

Another example of the structure of the semiconductor device inEmbodiment 1 is described with reference to FIGS. 3A and 3B. FIGS. 3Aand 3B are schematic views illustrating the example of the structure ofthe semiconductor device in Embodiment 1. FIG. 3A is a top view and FIG.3B is a cross-sectional view taken along line A1-A2 of FIG. 3A.

A semiconductor device illustrated in FIGS. 3A and 3B includes theelectrode 101, the wiring 102, the functional circuit 103, and the oxidesemiconductor layer 104 as illustrated in FIG. 3A, and further includesthe insulating layer 106 and the insulating layer 107 as illustrated inFIG. 3B.

As illustrated in FIG. 3B, the insulating layer 106 is provided over thesubstrate 100 with the wiring 102 interposed therebetween; the oxidesemiconductor layer 104 is provided over the insulating layer 106; theinsulating layer 107 is provided over the insulating layer 106 with theoxide semiconductor layer 104 interposed therebetween; and the electrode101 is provided over the oxide semiconductor layer 104 with theinsulating layer 107 interposed therebetween. That is, a structure inwhich, in the plane view, the oxide semiconductor layer 104 overlapswith the electrode 101 and the oxide semiconductor layer 104 does notoverlap with the wiring 102 is obtained as illustrated in FIG. 3A. Notethat the description of the other components of the semiconductor deviceillustrated in FIGS. 3A and 3B is the same as the description ofcorresponding components of the semiconductor device illustrated inFIGS. 1A and 1B. Therefore, the description of the correspondingcomponents of the semiconductor device illustrated in FIGS. 1A and 1B isapplied thereto as appropriate.

Another example of the structure of the semiconductor device inEmbodiment 1 is described with reference to FIGS. 4A and 4B. FIGS. 4Aand 4B are schematic views illustrating the example of the structure ofthe semiconductor device in Embodiment 1. FIG. 4A is a top view and FIG.4B is a cross-sectional view taken along line A1-A2 and A3-A4 of FIG.4A.

A semiconductor device illustrated in FIGS. 4A and 4B includes theelectrode 101, the wiring 102, the functional circuit 103, and the oxidesemiconductor layer 104 as illustrated in FIG. 4A, and further includesthe insulating layer 106 and the insulating layer 107 as illustrated inFIG. 4B.

As illustrated in FIG. 4B, the insulating layer 106 is provided over thesubstrate 100 with the wiring 102 interposed therebetween; the oxidesemiconductor layer 104 is provided over the wiring 102 with theinsulating layer 106 interposed therebetween; the insulating layer 107is provided over the insulating layer 106 with the oxide semiconductorlayer 104 interposed therebetween; and the electrode 101 is providedover the insulating layer 107. That is, a structure in which, in theplane view, the oxide semiconductor layer 104 overlaps with the wiring102 and the oxide semiconductor layer 104 does not overlap with theelectrode 101 is obtained as illustrated in FIG. 4A. Note that thedescription of the other components of the semiconductor deviceillustrated in FIGS. 4A and 4B is the same as the description ofcorresponding components of the semiconductor device illustrated inFIGS. 1A and 1B. Therefore, the description of the correspondingcomponents of the semiconductor device illustrated in FIGS. 1A and 1B isapplied thereto as appropriate.

Note that the semiconductor devices illustrated in FIGS. 1A and 1B,FIGS. 2A and 2B, and FIGS. 4A and 4B each have a structure in which, inthe plane view, the wiring 102 overlaps with the oxide semiconductorlayer 104. Each of the semiconductor devices of Embodiment 1 does notnecessarily include a structure in which the wiring overlaps with theoxide semiconductor layer; however, when the structure in which thewiring overlaps with the oxide semiconductor layer is included,deterioration of the oxide semiconductor layer due to incidence of lightcan be inhibited.

Another example of the structure of the semiconductor device inEmbodiment 1 is described with reference to FIGS. 5A and 5B. FIGS. 5Aand 5B are schematic views illustrating the example of the structure ofthe semiconductor device in Embodiment 1. FIG. 5A is a top view and FIG.5B is a cross-sectional view taken along line A1-A2 and A3-A4 of FIG.5A.

A semiconductor device illustrated in FIGS. 5A and 5B includes theelectrode 101, the wiring 102, the functional circuit 103, an oxidesemiconductor layer 1041, an oxide semiconductor layer 1042, and thewiring 108 as illustrated in FIG. 5A, and further includes theinsulating layer 106 and the insulating layer 107 as illustrated in FIG.5B.

As illustrated in FIG. 5B, the wiring 102 is provided over the substrate100; the insulating layer 106 is provided over the substrate 100 withthe wiring 102 interposed therebetween; the wiring 108 is provided overthe insulating layer 106; the oxide semiconductor layer 1041 is providedover the wiring 102 with the insulating layer 106 interposedtherebetween; the oxide semiconductor layer 1042 is provided over thewiring 102 with the insulating layer 106 and the wiring 108 interposedtherebetween; the insulating layer 107 is provided over the insulatinglayer 106 with the oxide semiconductor layer 1041, the oxidesemiconductor layer 1042, and the wiring 108 interposed therebetween;and the electrode 101 is provided over the insulating layer 107. Thatis, as illustrated in FIG. 5A, a structure in which, in the plane view,the oxide semiconductor layer 1041 overlaps with the electrode 101 andthe wiring 102 and the oxide semiconductor layer 1042 overlaps with thewiring 102 and the electrode 101 is obtained.

The electrode 101 is electrically connected to the wiring 102 through anopening portion 1051 provided in the insulating layer 106 and theinsulating layer 107. Further, the electrode 101 is electricallyconnected to the wiring 108 through an opening portion 1052 provided inthe insulating layer 107.

The oxide semiconductor layer 1041 and the oxide semiconductor layer1042 can be formed using a material which can also be used for the oxidesemiconductor layer 104 illustrated in FIGS. 1A and 1B, for example.

Note that the description of the other components of the semiconductordevice illustrated in FIGS. 5A and 5B is the same as the description ofcorresponding components of the semiconductor device illustrated inFIGS. 1A and 1B. Therefore, the description of the correspondingcomponents of the semiconductor device illustrated in FIGS. 1A and 1B isapplied thereto as appropriate.

As illustrated in FIGS. 5A and 5B as an example, the semiconductordevice of Embodiment 1 can be formed to have a plurality of oxidesemiconductor layers, and further, the semiconductor device ofEmbodiment 1 can be formed to have a structure including a plurality ofcapacitors including a plurality of oxide semiconductor layers, aconductive layer forming a wiring or an electrode, and an insulatinglayer provided between the oxide semiconductor layer and the conductivelayer. Each of the capacitors has a function as part of a protectioncircuit. Further, the capacitor has a function as part of a filtercircuit for reducing the adverse effects of noise. For example, onecapacitor may serve as part of a filter circuit which functions when asignal of positive voltage is inputted or positive voltage is applied,and the other capacitor may serve as part of a filter circuit whichfunctions when a signal of negative voltage is inputted or negativevoltage is applied. Further, in the semiconductor device illustrated inFIGS. 5A and 5B, the conductivity types of the plurality of oxidesemiconductor layers can be the same; thus, the increase of the numberof steps can be prevented.

Another example of the structure of the semiconductor device inEmbodiment 1 is described with reference to FIGS. 6A and 6B. FIGS. 6Aand 6B are schematic views illustrating the example of the structure ofthe semiconductor device in Embodiment 1. FIG. 6A is a top view and FIG.6B is a cross-sectional view taken along line A1-A2 and A3-A4 of FIG.6A.

A semiconductor device illustrated in FIGS. 6A and 6B includes theelectrode 101, the wiring 102, the functional circuit 103, the oxidesemiconductor layer 1041, and the oxide semiconductor layer 1042 asillustrated in FIG. 6A, and further includes the insulating layer 106and the insulating layer 107 as illustrated in FIG. 6B.

As illustrated in FIG. 6B, the wiring 102 is provided over the substrate100; the insulating layer 106 is provided over the substrate 100 withthe wiring 102 interposed therebetween; the oxide semiconductor layer1041 and the oxide semiconductor layer 1042 are provided over the wiring102 with the insulating layer 106 interposed therebetween; theinsulating layer 107 is provided over the insulating layer 106 with theoxide semiconductor layer 1041 and the oxide semiconductor layer 1042interposed therebetween; and the electrode 101 is provided over theinsulating layer 107. That is, as illustrated in FIG. 6A, thesemiconductor device illustrated in FIGS. 6A and 6B has a structure inwhich, in the plane view, the oxide semiconductor layer 1041 and theoxide semiconductor layer 1042 overlap with the wiring 102, and theoxide semiconductor layer 1041 and the oxide semiconductor layer 1042 donot overlap with the electrode 101. Note that the distance in the planeview between the oxide semiconductor layer 1041 and the oxidesemiconductor layer 1042 illustrated in FIG. 6B can be set asappropriate. The semiconductor device of Embodiment 1 does notnecessarily include a structure in which the wiring and the oxidesemiconductor layer overlap with each other; however, when such astructure is included, deterioration of the oxide semiconductor layerdue to incidence of light can be inhibited, which is preferable.

The oxide semiconductor layer 1041 and the oxide semiconductor layer1042 can be formed using a material which can also be used for the oxidesemiconductor layer 104 illustrated in FIGS. 1A and 1B, for example.

Note that the description of the other components of the semiconductordevice illustrated in FIGS. 6A and 6B is the same as the description ofcorresponding components of the semiconductor device illustrated inFIGS. 1A and 1B. Therefore, the description of the correspondingcomponents of the semiconductor device illustrated in FIGS. 1A and 1B isapplied thereto as appropriate.

As illustrated in FIGS. 6A and 6B as an example, the semiconductordevice of Embodiment 1 can be formed to have a plurality of oxidesemiconductor layers, and further, the semiconductor device ofEmbodiment 1 can be formed to have a structure including a plurality ofcapacitors including a plurality of oxide semiconductor layers, aconductive layer forming a wiring or an electrode, and an insulatinglayer provided between the oxide semiconductor layer and the conductivelayer. Each of the capacitors has a function as part of a protectioncircuit. Further, the capacitor has a function as part of a filtercircuit for reducing the adverse effects of noise. For example, onecapacitor may serve as part of a filter circuit which functions when asignal of positive voltage is inputted or positive voltage is applied,and the other capacitor may serve as part of the filter circuit whichfunctions when a signal of negative voltage is inputted or negativevoltage is applied.

Another example of the structure of the semiconductor device inEmbodiment 1 is described with reference to FIGS. 7A and 7B. FIGS. 7Aand 7B are schematic views illustrating an example of the structure ofthe semiconductor device in Embodiment 1. FIG. 7A is a top view and FIG.7B is a cross-sectional view taken along line A1-A2 of FIG. 7A.

A semiconductor device illustrated in FIGS. 7A and 7B includes theelectrode 101, the wiring 102, the functional circuit 103, and the oxidesemiconductor layer 104 as illustrated in FIG. 7A, and further includesthe insulating layer 106 and the insulating layer 107 as illustrated inFIG. 7B.

As illustrated in FIG. 7B, the oxide semiconductor layer 104 is providedover the substrate 100; the insulating layer 106 is provided over thesubstrate 100 with the oxide semiconductor layer 104 interposedtherebetween; the wiring 102 is provided over the oxide semiconductorlayer 104 with the insulating layer 106 interposed therebetween; theinsulating layer 107 is provided over the wiring 102; and the electrode101 is provided over the wiring 102 and the insulating layer 107. Thatis, a structure in which, in the plane view, the oxide semiconductorlayer 104 and the wiring 102 overlap with each other and the oxidesemiconductor layer 104 and the electrode 101 overlap with each other isobtained as illustrated in FIG. 7A. Note that the description of theother components of the semiconductor device illustrated in FIGS. 7A and7B is the same as the description of corresponding components of thesemiconductor device illustrated in FIGS. 1A and 1B. Therefore, thedescription of the corresponding components of the semiconductor deviceillustrated in FIGS. 1A and 1B is applied thereto as appropriate.

Note that the semiconductor device illustrated in FIGS. 7A and 7B has astructure in which, in the plane view, the oxide semiconductor layer 104overlaps with the wiring 102 and the oxide semiconductor layer 104overlaps with the electrode 101. However, the semiconductor device ofEmbodiment 1 is not limited thereto. A structure in which the wiring 102overlaps with the oxide semiconductor layer 104 and the electrode 101does not overlap with the oxide semiconductor layer 104, or a structurein which the electrode 101 overlaps with the oxide semiconductor layer104 and the wiring 102 overlaps with the oxide semiconductor layer 104can be obtained.

Equivalent circuits of semiconductor devices illustrated in FIGS. 1A and1B, FIGS. 2A and 2B, FIGS. 3A and 3B, FIGS. 4A and 4B, FIGS. 5A and 5B,FIGS. 6A and 6B, and FIGS. 7A and 7B are described with reference toFIGS. 8A and 8B. FIGS. 8A and 8B are circuit diagrams illustrating theequivalent circuits of the semiconductor devices illustrated in FIGS. 1Aand 1B, FIGS. 2A and 2B, FIGS. 3A and 3B, FIGS. 4A and 4B, FIGS. 5A and5B, FIGS. 6A and 6B, and FIGS. 7A and 7B. FIG. 8A is a circuit diagramillustrating the equivalent circuit of the semiconductor deviceillustrated in each of FIGS. 1A and 1B, FIGS. 2A and 2B, FIGS. 3A and3B, FIGS. 4A and 4B, and FIGS. 7A and 7B. FIG. 8B is a circuit diagramillustrating the equivalent circuit of the semiconductor deviceillustrated in each of FIGS. 5A and 5B and FIGS. 6A and 6B.

The equivalent circuit illustrated in FIG. 8A includes a terminal 111, aresistor 112, a capacitor 113, and a functional circuit 114.

The terminal 111 includes the electrode 101 in its part, and a signal isinputted or voltage is applied via the terminal 111.

The resistor 112 can be formed using wiring resistance of the wiring102, for example. Further, the present invention is not limited thereto,and the resistor can be separately formed using, for example, asemiconductor material or the like in the semiconductor device ofEmbodiment 1.

The capacitor 113 includes a first terminal and a second terminal. Thefirst terminal of the capacitor 113 is electrically connected to theterminal 111 via the resistor 112 and is electrically connected to thefunctional circuit 114. Given voltage is applied to the second terminalof the capacitor 113 via a terminal 115. The first terminal of thecapacitor 113 is formed using one of a conductive layer and asemiconductor layer, for example. The second terminal of the capacitor113 is formed using the other of the conductive layer and thesemiconductor layer. As the conductive layer, for example, the electrode101, the wiring 102, the wiring 108, or the like can be used. As thesemiconductor layer, for example, the oxide semiconductor layer 104 canbe used. Given voltage is applied to the second terminal of thecapacitor 113. As the given voltage, for example, power supply voltageis used. The level of the power supply voltage can be set as appropriateso that a desired function can be obtained in accordance with a signalinputted. However, the present invention is not limited thereto, and thesecond terminal of the capacitor 113 can be set in a floating state. Thecapacitor 113 has a function as a variable capacitor.

As illustrated in FIG. 8A, the semiconductor device illustrated in eachof FIGS. 1A and 1B, FIGS. 2A and 2B, FIGS. 3A and 3B, FIGS. 4A and 4B,and FIGS. 7A and 7B includes a filter circuit using a resistor and acapacitor.

Next, as an example of operation of the semiconductor device ofEmbodiment 1, operation of the semiconductor device whose equivalentcircuit is illustrated in FIG. 8A is described. Here, the case where theabsolute value of voltage of an input signal is smaller than or equal toa given value and the case where the absolute value of the voltage ofthe input signal is larger than the given value are separatelydescribed. Note that the given value can be set as appropriate inconsideration of the specification of the functional circuit, or thelike, for example.

The capacitance of the capacitor 113 is changed in accordance withvoltage of an input signal. In the case where the absolute value ofvoltage of the input signal is smaller than or equal to a given value,the absolute value of voltage applied between the terminals of thecapacitor 113 is smaller than a given value, and the capacitance of thecapacitor 113 is smaller than a given value. Therefore, the delay timeof an output signal with respect to the input signal of the filtercircuit is shorter than given time. Thus, the effect of filtering issmall. Note that the voltage applied to the capacitor, the capacitanceof the capacitor, and the delay time can be set as appropriate inaccordance with the specification of the semiconductor device.

In the case where the absolute value of voltage of an input signal islarger than a given value, the absolute value of voltage applied betweenthe terminals of the capacitor 113 is larger than a given value, and thecapacitance of the capacitor 113 is larger than a given value inaccordance with the input signal, which results in a long delay of anoutput signal with respect to the input signal of the filter circuit.Thus, the effect of filtering with respect to noise is larger than thatof the case where the absolute value of the voltage of the input signalis smaller than or equal to a given value. The above is the operation ofthe semiconductor device whose equivalent circuit is illustrated in FIG.8A.

The equivalent circuit illustrated in FIG. 8B includes the terminal 111,the resistor 112, a capacitor 1131, a capacitor 1132, and the functionalcircuit 114.

The terminal 111 includes the electrode 101 in its part, and a signal isinputted or voltage is applied via the terminal 111.

The resistor 112 can be formed using wiring resistance of the wiring102, for example. Further, the present invention is not limited thereto,and the resistor can be separately formed using, for example, asemiconductor material or the like in the semiconductor device ofEmbodiment 1.

The capacitor 1131 includes a first terminal and a second terminal. Thefirst terminal of the capacitor 1131 is electrically connected to theterminal 111 via the resistor 112 and is electrically connected to thefunctional circuit 114. High power supply voltage is applied to thesecond terminal of the capacitor 1131 via a terminal 1151. The firstterminal of the capacitor 1131 is formed using a conductive layer, forexample. The second terminal of the capacitor 1131 is formed using asemiconductor layer, for example. As the conductive layer, the electrode101, the wiring 102, the wiring 108, or the like can be used, forexample. As the semiconductor layer, the oxide semiconductor layer 1041can be used, for example. The capacitor 1131 has a function as avariable capacitor.

The capacitor 1132 includes a first terminal and a second terminal. Thefirst terminal of the capacitor 1132 is electrically connected to theterminal 111 via the resistor 112 and is electrically connected to thefunctional circuit 114. Low power supply voltage is applied to thesecond terminal of the capacitor 1132 via a terminal 1152. The firstterminal of the capacitor 1132 is formed using a semiconductor layer,for example. The second terminal of the capacitor 1132 is formed using aconductive layer, for example. As the conductive layer, the electrode101, the wiring 102, the wiring 108, or the like can be used, forexample. As the semiconductor layer, the oxide semiconductor layer 1042can be used, for example. The capacitor 1132 has a function as avariable capacitor.

As illustrated in FIG. 8B, the semiconductor devices illustrated inFIGS. 5A and 5B and FIGS. 6A and 6B each include a filter circuit usinga resistor and two capacitors.

Next, as an example of operation of the semiconductor device ofEmbodiment 1, operation of a semiconductor device whose equivalentcircuit is illustrated in FIG. 8B is described. Here, the case where asignal is inputted via the terminal 111 is described as an example, andthe case where the absolute value of voltage of an input signal issmaller than or equal to a given value and the case where the absolutevalue of the voltage of the input signal is larger than a given valueare separately described. Note that the given value can be set asappropriate in consideration of the specification of the functionalcircuit or the like, for example.

The capacitance of each of the capacitor 1131 and the capacitor 1132 ischanged in accordance with voltage of an input signal. In the case wherethe absolute value of the voltage of the input signal is smaller than orequal to a given value, voltage applied between the terminals of each ofthe capacitor 1131 and the capacitor 1132 is smaller than a givennegative value, and the capacitance of each of the capacitor 1131 andthe capacitor 1132 is smaller than a given value. Therefore, the delaytime of an output signal with respect to the input signal of the filtercircuit is shorter than given time. Thus, the effect of filtering issmall. Note that the voltage applied to the capacitor, the capacitanceof the capacitor, and the delay time can be set as appropriate inaccordance with the specification of the semiconductor device.

In the case where the level of voltage of the input signal is higherthan a given positive level, the level of voltage applied between theterminals of the capacitor 1131 is higher than a given positive level,and the capacitance of the capacitor 1131 is larger than a given valuein accordance with the input signal, which results in a long delay ofthe output signal with respect to the input signal of a filter circuit.Thus, the effect of filtering with respect to noise is larger than thatof the case where the level of voltage of the input signal is lower thanor equal to a given positive level or higher than or equal to a givennegative level.

In the case where the level of voltage of the input signal is lower thana given negative level, the level of voltage applied between theterminals of the capacitor 1132 is higher than a given positive level,and the capacitance of the capacitor 1132 is larger than a given valuein accordance with the input signal, which results in a long delay ofthe output signal with respect to the input signal of the filtercircuit. Thus, the effect of filtering with respect to noise is largerthan that of the case where the level of voltage of the input signal islower than or equal to a given positive level or higher than or equal toa given negative level. The above is the operation of the semiconductordevice whose equivalent circuit is illustrated in FIG. 8B.

As described above, in the case where a signal with voltage whoseabsolute value is smaller than or equal to a given value is inputted,the capacitance of a capacitor is made small, so that the delay of asignal inputted to a functional circuit is made shorter. In addition, inthe case where a signal with voltage whose absolute value is larger thana given value is inputted, the capacitance of the capacitor is madelarge, so that the delay of a signal inputted to a functional circuit isincreased. Accordingly, adverse effects on actual operation can bereduced, and adverse effects on an input signal due to noise can bereduced in the case where the noise is generated, for example. Note thatthe present invention is not limited to the case where a signal is used,and in the case where voltage is applied via a terminal electrode,adverse effects on the voltage due to noise can also be reduced.

A functional circuit including a semiconductor element using an oxidesemiconductor often needs a comparatively higher level of operatingvoltage than a functional circuit including a semiconductor elementusing a polycrystalline semiconductor, for example. Therefore, theabsolute value of voltage of an input signal tends to be large. However,as in the semiconductor device of Embodiment 1, a filter circuit using acapacitor is provided between a functional circuit and a terminalelectrode which are electrically connected to each other, wherebyadverse effects of noise can be reduced even in a functional circuitincluding a semiconductor element using an oxide semiconductor.

Further, voltage-capacitance characteristics of a capacitor using asemiconductor layer are inspected by calculation. Note that TCADsoftware ATLAS, which is made by Silvaco Data Systems Inc., is used forthe calculation. Further, in the calculation, a MIS capacitor using asemiconductor layer is used as the capacitor, for example. Table 1 showsmain parameters used for the calculation.

TABLE 1 dielectric constant of an insulating layer  4 dielectricconstant of a semiconductor layer 10 film thickness of an insulatinglayer 0.1 [μm] film thickness of a semiconductor layer 2.0 [μm] electronaffinity of a semiconductor layer 4.2 [eV] band gap 1.1 [eV], 3.0 [eV]effective density of state of a conduction band 2.8 × 10¹⁹ [cm³]effective density of state of a valence band 1.04 × 10¹⁹ [cm⁻³]

As illustrated in Table 1, two band gaps (a band gap is also referred toas E_(g)), 3.0 eV and 1.1 eV, are used. The equation of E_(g)=3.0 eV isan example of a band gap in the case where, as one oxide semiconductor,an amorphous oxide semiconductor is used for a semiconductor layer. Theequation of E_(g)=1.1 eV is an example of a band gap in the case where asilicon semiconductor is used for a semiconductor layer as a comparativeexample. Further, measurement frequency is set to 1×10⁶ kHz.Furthermore, an n-type semiconductor layer is used.

The inspection results of voltage-capacitance characteristics of thecapacitor are described with reference to FIG. 9. FIG. 9 is a graphillustrating the calculation result of voltage-capacitancecharacteristics of a capacitor of Embodiment 1. In FIG. 9, thehorizontal axis indicates voltage applied to a capacitor (such voltageis also referred to as V_(c)), and the vertical axis indicates C dividedby C_(ox), where C represents the total capacitance and C_(ox)represents the capacitance of an insulating layer.

As illustrated in FIG. 9, the voltage-capacitance characteristics areassumed characteristics of a device which is designed using the aboveparameters or the like. For example, on the negative voltage side wherevoltage is lower than or equal to −1 V, C/C_(ox) of E_(g)=3.0 eVconverges to approximately 0.13, and C/C_(ox) of E_(g)=1.1 eV convergesto approximately 0.24. Thus, the capacitance of E_(g)=3.0 eV is smallerthan the capacitance of E_(g)=1.1 eV. Further, on the positive voltageside, a capacitance of both E_(g)=3.0 eV and E_(g)=1.1 eV becomes largeras voltage becomes higher, and C/C_(ox) converges to 1. Accordingly, itis apparent that capacitors using semiconductor layers havecharacteristics such that capacitances are large in a storage state andthe capacitances are small in a reverse state. Further, the capacitanceof a capacitor using a semiconductor with a band gap of 3.0 eV issmaller than the capacitance of a capacitor using a semiconductor with aband gap of 1.1 eV, in a reverse state. The capacitance of a capacitorin a reverse state is equal to a capacitance obtained by connecting acapacitor of an insulating layer and a capacitor of a depletion layer ina semiconductor layer in series.

Thus, when a capacitor using a semiconductor layer is used for a filtercircuit, it is apparent that the capacitor is preferably set in areverse state in the case of inputting a normal signal with voltagewhose absolute value is smaller than or equal to a given value, and thatthe capacitor is preferably set in a storage state in the case ofinputting a signal with voltage whose absolute value is larger than agiven value. However, the present invention is not necessarily limitedthereto.

Further, the function of a filter circuit using a capacitor including asemiconductor layer is inspected by calculation. First, the circuitmodel of a filter circuit used for the calculation is described withreference to FIG. 10. FIG. 10 is a circuit diagram illustrating thecircuit model of the filter circuit whose function is to be inspected inEmbodiment 1.

The circuit model illustrated in FIG. 10 includes a terminal 201, aresistor 202, a capacitor 203, a terminal 204, a capacitor 205, aterminal 206, and a terminal 207.

In the circuit model illustrated in FIG. 10, an input signal (alsoreferred to as IN) is inputted via the terminal 201. The input signal isinputted to a filter circuit including the resistor 202, the capacitor203, and the capacitor 205, and an output signal (also referred to asOUT) of the filter circuit is outputted via the terminal 207.

Further, in the circuit model illustrated in FIG. 10, high power supplyvoltage is applied via the terminal 204, and low power supply voltage isapplied via the terminal 206.

The inspection is performed using the circuit model illustrated in FIG.10. For the calculation, TCAD software ATLAS, which is made by SilvacoData Systems Inc., is used. Further, in the calculation, a MIS capacitorusing a semiconductor layer is used as the capacitor, for example.Furthermore, in the calculation, the parameters illustrated in Table 1are used as appropriate.

The calculation is performed for the cases where the following signalsare inputted as input signals: a first digital signal (also referred toas DS1) in which voltage at a high level (also referred to as H) is 5 Vand voltage at a low level (also referred to as L) is 0 V (H=5 V and L=0V); a second digital signal (also referred to as DS2) in which voltageat a high level is 15 V and voltage at a low level is 10 V; and a thirddigital signal (also referred to as DS3) in which voltage at a highlevel is −5 V and voltage at a low level is −10 V. Further, in thecalculation, V_(dd)=8V and V_(ss)=−3V are used such that the capacitor203 and the capacitor 205 are set in a reverse state in the case wherethe first digital signal is inputted; the capacitor 205 is set in astorage state in the case where the second digital signal is inputted;and the capacitor 203 is set in a storage state in the case where thethird digital signal is inputted. Furthermore, in the calculation, thethickness of the semiconductor layer, the carrier density of thesemiconductor layer, and the like are set such that C/C_(ox) at a bandgap of 3.0 eV is set to 0.13 and C/C_(ox) at a band gap of 1.1 eV is setto 0.24 in a reverse state. Note that an n-type semiconductor layer isused as the semiconductor layer.

The calculation results are described with reference to FIGS. 11A and11B, FIGS. 12A and 12B, and FIGS. 13A and 13B. FIGS. 11A and 11B, FIGS.12A and 12B, and FIGS. 13A and 13B are graphs illustrating input/outputcharacteristics obtained by the calculation with the use of the circuitmodel illustrated in FIG. 10.

FIG. 11A is a graph illustrating input/output characteristics of thecase where the first digital signal is inputted. The horizontal axisindicates time divided by RC_(ox), where RC_(ox) is obtained bymultiplying the resistance (R) of the resistor 202 by the capacitance ofthe insulating layer (C_(ox)), and the vertical axis indicates signalvoltage (also referred to as V_(sig)). Further, FIG. 11B is an enlargedview of a graph of FIG. 11A between T1 and T2. Note that in thecalculation, the area of the capacitance of the insulating layer and theresistance of the resistor 202 are set so that RC_(ox)=2.83

FIG. 12A is a graph illustrating input/output characteristics of thecase where the second digital signal is inputted. The horizontal axisindicates time divided by RC_(ox), where RC_(ox) is obtained bymultiplying the resistance (R) of the resistor 202 by the capacitance ofthe insulating layer (C_(ox)), and the vertical axis indicates voltage.Further, FIG. 12B is an enlarged view of a graph of FIG. 12A between T1and T2.

FIG. 13A is a graph illustrating input/output characteristics of thecase where the third digital signal is inputted. The horizontal axisindicates time divided by RC_(ox), where RC_(ox) is obtained bymultiplying the resistance (R) of the resistor 202 by the capacitance ofthe insulating layer (C_(ox)), and the vertical axis indicates voltage.Further, FIG. 13B is an enlarged view of a graph of FIG. 13A between T1and T2.

Note that the horizontal axes of FIG. 11A, FIG. 12A, and FIG. 13A eachhave divisions for equal values. Further, the horizontal axes of FIG.11B, FIG. 12B, and FIG. 13B each have divisions for equal values.

In the case where the first digital signal is inputted, as illustratedin FIGS. 11A and 11B, the delay of rise time or fall time of an outputsignal (also referred to as OUT) of E_(g)=3.0 eV is shorter than thedelay of rise time or fall time of an output signal of E_(g)=1.1 eV.This is because, in a reverse state, the capacitance of E_(g)=3.0 eV issmaller than the capacitance of E_(g)=1.1 eV as illustrated in FIG. 9.

In the case where the second digital signal is inputted, as illustratedin FIGS. 12A and 12B, the delay of rise time of an output signal ofE_(g)=3.0 eV and an output signal of E_(g)=1.1 eV is longer than thedelay of rise time of the case where the first digital signal isinputted. This is because, as illustrated in FIG. 9, in a storage state,each of the capacitance of E_(g)=3.0 eV and the capacitance of E_(g)=1.1eV increases to a given value as voltage becomes higher.

In the case where the third digital signal is inputted, as illustratedin FIGS. 13A and 13B, the delay of fall time of an output signal ofE_(g)=3.0 eV and an output signal of E_(g)=1.1 eV is longer than thedelay of fall time of the case where the first digital signal isinputted. This is because, as illustrated in FIG. 9, in a storage state,the capacitance at E_(g)=3.0 eV and the capacitance at E_(g)=1.1 eVincreases to a given value as voltage becomes higher.

Table 2 summarizes delay time of output signals of the cases where thefirst to third digital signals are inputted. Note that, in Table 2, “tf”indicates fall time and “tr” indicates rise time. Further, average delaytime is also represented by (tf+tr)/2. Note that the delay time isdefined as time which is needed for an output signal to change from 10%to 90% of the amplitude of an input signal. Further, values shown inTable 2 are obtained by dividing each delay time by RC_(ox).

TABLE 2 tf tr (tf + tr)/2 DS1 OUT (Eg = 3.0) 0.598 0.600 0.599 OUT (Eg =1.1) 0.676 0.712 0.694 DS2 OUT (Eg = 3.0) 2.396 2.403 2.399 OUT (Eg =1.1) 2.465 2.439 2.452 DS3 OUT (Eg = 3.0) 2.406 2.396 2.401 OUT (Eg =1.1) 2.438 2.472 2.455

As shown in Table 2, average delay time of the case where the firstdigital signal (DS1) is inputted is shorter than average delay time ofthe case where the second digital signal (DS2) and the third digitalsignal (DS3) are inputted. Further, in the case where the first digitalsignal is inputted, average delay time at E_(g)=3.0 eV is shorter thanaverage delay time of an output signal at E_(g)=1.1 eV.

From the above inspection results, a filter circuit using a capacitorincluding an oxide semiconductor layer can reduce the delay of an outputsignal in the case where a signal with voltage whose absolute value isin a given range is inputted, and can delay an output signal in the casewhere a signal with voltage whose absolute value is out of the givenrange is inputted. Accordingly, adverse effects on actual operation canbe reduced. For example, in the case where a signal with voltage whoseabsolute value is larger than a given value is inputted due to noise orthe like, adverse effects of noise can be reduced.

Note that, for example, even in the case where an oxide semiconductorlayer is subjected to heat treatment, the inspection results which aresimilar to those of the above characteristics can be obtained as amatter of course.

Further, as described above, delay time is determined depending on theresistance and the capacitance. Therefore, for example, the value of aninput signal and the levels of high power supply voltage and low powersupply voltage are set as appropriate in accordance with thespecification of a functional circuit. Accordingly, filteringcharacteristics which are similar to those of the filter circuit usedfor the calculation can be obtained as a matter of course.

Embodiment 2

In Embodiment 2, a display device which is one embodiment of the presentinvention is described.

The structure of the display device of Embodiment 2 is described withreference to FIG. 14. FIG. 14 illustrates an example of the structure ofthe display device of Embodiment 2.

The display device illustrated in FIG. 14 includes a terminal electrode501, a wiring 502, a scan line driver circuit 503, scan lines 5031, asignal line driver circuit 504, signal lines 5041, and a pixel portion505.

The terminal electrode 501 is provided in a terminal portion 506 and hasa function as part of a signal input terminal to which, for example, ascan signal, a video signal, or the like are inputted, and also has afunction as part of a power supply terminal to which power supplyvoltage is applied.

The scan line driver circuit 503 is electrically connected to theterminal electrode 501 via the wiring 502. For example, a signal such asa control signal is inputted or power supply voltage is applied from theterminal portion 506 to the scan line driver circuit 503. In addition, ascan signal is outputted at timing in accordance with the signalinputted, via the scan line 5031.

The signal line driver circuit 504 is electrically connected to theterminal electrode 501 via the wiring 502. For example, a signal such asa control signal or a video signal is inputted or power supply voltageis applied from the terminal portion 506 to the signal line drivercircuit 504. In addition, a video signal is outputted at timing inaccordance with the signal inputted, via the signal line 5041.

The pixel portion 505 includes a plurality of pixels 5051. Each of thepixels 5051 is electrically connected to any of the scan lines 5031 andany of the signal lines 5041, so that a scan signal and a video signalare inputted.

Examples of a circuit configuration of the pixel 5051 are described withreference to FIGS. 15A and 15B. FIGS. 15A and 15B illustrate examples ofthe circuit configuration of the pixel 5051.

A pixel illustrated in FIG. 15A includes a transistor 611, a liquidcrystal element 612, and a capacitor 613.

The transistor 611 includes at least three terminals: a gate terminal, asource terminal, and a drain terminal.

Note that, in this specification, a gate terminal refers to part of agate electrode and a conductive layer to be a wiring electricallyconnected to a gate electrode (such a wiring is also referred to as agate wiring) or the entire gate electrode and conductive layer to be awiring electrically connected to a gate electrode. Further, a sourceterminal refers to part of a source electrode and a layer (including aconductive layer or the like) to be a wiring electrically connected to asource electrode (such a wiring is also referred to as a source wiring)or the entire source electrode and layer (including a conductive layeror the like) to be a wiring electrically connected to a sourceelectrode. Furthermore, a drain terminal refers to part of a drainelectrode and a layer (including a conductive layer or the like) to be awiring electrically connected to a drain electrode (such a wiring isalso referred to as a drain wiring) or the entire drain electrode andlayer (including a conductive layer or the like) to be a wiringelectrically connected to a drain electrode.

Further, in this specification, a source terminal and a drain terminalof a transistor may change depending on the structure, the operatingcondition, or the like of the transistor; therefore, it is difficult todefine which is a source terminal or a drain terminal in terminals ofthe transistor other than a gate terminal. Thus, in this specification,in a plurality of terminals, a terminal to be one of a source terminalor a drain terminal is referred to as one of the source terminal and thedrain terminal, whereas a terminal to be the other of the sourceterminal or the drain terminal is referred to as the other of the sourceterminal and the drain terminal.

The transistor 611 has a function as a selection switch. Further, a gateterminal of the transistor 611 is electrically connected to the scanline 5031 illustrated in FIGS. 15A and 15B, and one of the sourceterminal and the drain terminal of the transistor 611 is electricallyconnected to the signal line 5041.

The liquid crystal element 612 has a first terminal and a secondterminal. The first terminal of the liquid crystal element 612 iselectrically connected to the other of the source terminal and the drainterminal of the transistor 611. Voltage at a given level is applied tothe second terminal of the liquid crystal element 612. The liquidcrystal element 612 can include a first electrode which serves as partof or the entire first terminal, a second electrode which serves as partof or the entire second terminal, and a layer including liquid crystalmolecules whose transmittance is changed by application of voltagebetween the first electrode and the second electrode (such a layer isreferred to as a liquid crystal layer).

The following are examples of the liquid crystal layer, a liquid crystalmaterial which can be used for the liquid crystal layer, or a liquidcrystal mode which can be used for the liquid crystal element 612including the liquid crystal layer: a nematic liquid crystal, acholesteric liquid crystal, a smectic liquid crystal, a discotic liquidcrystal, a thermotropic liquid crystal, a lyotropic liquid crystal, alow molecular liquid crystal, a high molecular liquid crystal, a PDLC (apolymer dispersed liquid crystal), a ferroelectric liquid crystal, ananti-ferroelectric liquid crystal, a main chain type liquid crystal, aside chain type polymer liquid crystal, a PALC (a plasma addressedliquid crystal), a banana-shaped liquid crystal, a TN (twisted nematic)mode, an STN (super twisted nematic) mode, an IPS (in-plane-switching)mode, an FFS (fringe field switching) mode, an MVA (multi-domainvertical alignment) mode, a PVA (patterned vertical alignment) mode, anASV (advanced super view) mode, an ASM (axially symmetric alignedmicro-cell) mode, an OCB (optical compensated birefringence) mode, anECB (electrically controlled birefringence) mode, an FLC (ferroelectricliquid crystal) mode, an AFLC (anti-ferroelectric liquid crystal) mode,a PDLC (polymer dispersed liquid crystal) mode, a guest-host mode, ablue-phase mode, and the like.

The capacitor 613 has a first terminal and a second terminal. The firstterminal of the capacitor 613 is electrically connected to the other ofthe source and the drain of the transistor 611. Voltage at a given levelis applied to the second terminal of the capacitor 613. The capacitor613 includes a first electrode which serves as part of or the entirefirst terminal, a second electrode which serves as part of or the entiresecond terminal, and an insulating layer. The capacitor 613 has afunction as a storage capacitor. Note that although the capacitor 613 isnot necessarily provided, the capacitor 613 can inhibit adverse effectsof leakage current of the transistor 611.

Next, operation of the pixel illustrated in FIG. 15A is described.

First, when the scan line 5031 is selected with the scan line drivercircuit 503 illustrated in FIG. 14, a scan signal is inputted from thescan line driver circuit 503, thereby turning the transistor 611 on.

At this time, a potential of the first terminal of the liquid crystalelement 612 and a potential of the first terminal of the capacitor 613each be a potential in accordance with a video signal inputted from thesignal line driver circuit 504. The alignment of the liquid crystalelement 612 is controlled in accordance with voltage applied between thefirst terminal and the second terminal, and an image is displayed withthe pixel in accordance with the transmissivity of the liquid crystalelement 612. The above operation is sequentially performed every scanline 5031, so that data is written to all the pixels. The above is theoperation of the pixel illustrated in FIG. 15A.

Note that the circuit configuration of a pixel in the display device ofEmbodiment 2 is not limited to the circuit configuration of the pixelillustrated in FIG. 15A. For example, the circuit configuration of thepixel illustrated in FIG. 15A, which is provided with another switchingelement (including a transistor), a resistor, another capacitor, or thelike, can be used.

Further, the circuit configuration of the pixel in the display device ofEmbodiment 2 is not limited to the circuit configuration of the pixelillustrated in FIG. 15A, and a different circuit configuration can beused. Another example of the circuit configuration of the pixel in thedisplay device of Embodiment 2 is described with reference to FIG. 15B.FIG. 15B is a circuit diagram illustrating the example of the circuitconfiguration of the pixel in the display device of Embodiment 2.

The pixel illustrated in FIG. 15B includes the transistor 611, thecapacitor 613, a transistor 614, and a light-emitting element 615.

The gate terminal of the transistor 611 is electrically connected to thescan line 5031, and one of the source terminal and the drain terminal ofthe transistor 611 is electrically connected to the signal line 5041.

The capacitor 613 includes the first terminal and the second terminal.The first terminal of the capacitor 613 is electrically connected to theother of the source terminal and the drain terminal of the transistor611, and first voltage is applied to the second terminal of capacitor613. The capacitor 613 has a function as a storage capacitor. Note thatalthough the capacitor 613 is not necessarily provided, with thecapacitor 613, the ON state of the transistor 614 can be held for acertain period of time.

A gate terminal of the transistor 614 is electrically connected to theother of the source terminal and the drain terminal of the transistor611, and the first voltage is applied to one of the source terminal andthe drain terminal of the transistor 614.

The light-emitting element 615 has a first terminal and a secondterminal. The first terminal of the light-emitting element 615 iselectrically connected to the other of the source terminal and the drainterminal of the transistor 614. Second voltage is applied to the secondterminal of the light-emitting element 615. The light-emitting element615 includes a first electrode which serves as part of or the entirefirst terminal, a second electrode which serves as part of or the entiresecond terminal, and an electroluminescence layer which emits light byapplication of voltage between the first electrode and the secondelectrode, for example. As the light-emitting element 615, an EL (alsoreferred to as electroluminescence) element can be used, for example. Asthe EL element, an organic EL element or an inorganic EL element can beused, for example.

Note that the first voltage is one of high power supply voltage and lowpower supply voltage, and the second voltage is the other of the highpower supply voltage and low power supply voltage. Which of the firstvoltage and the second voltage is high power supply voltage or low powersupply voltage is set in accordance with, for example, the polarity ofthe transistor 614. For example, in the case where the transistor 614 isa p-channel transistor, the first voltage is often set to high powersupply voltage, and the second voltage is often set to low power supplyvoltage. In the case where the transistor 614 is an n-channeltransistor, the first voltage is often set to low power supply voltage,and the second voltage is often set to high power supply voltage.

At least one of the first electrode and the second electrode of thelight-emitting element 615 may be formed using a conductive materialhaving a light-transmitting property. Thus, a light-emitting elementhaving a top emission structure in which light is extracted through asurface opposite to the substrate, having a bottom emission structure inwhich light is extracted through a surface on the substrate side, orhaving a dual emission structure in which light is extracted throughboth the surface opposite to the substrate and the surface on thesubstrate side can be obtained. As the conductive material having alight-transmitting property, a conductive material having alight-transmitting property, such as indium oxide including tungstenoxide, indium zinc oxide including tungsten oxide, indium oxideincluding titanium oxide, indium tin oxide including titanium oxide,indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, orindium tin oxide to which silicon oxide is added, can be used.

The electroluminescence layer may be formed using either a single layeror a stack including a plurality of layers. In the case where theelectroluminescence layer is formed using a plurality of layers, anelectron-injecting layer, an electron-transporting layer, anelectroluminescence layer, a hole-transporting layer, and ahole-injecting layer are stacked in that order over the first electrode.It is not necessary to form all of these layers. The electroluminescencelayer can be formed using an organic compound or an inorganic compound.

Next, the operation of the pixel illustrated in FIG. 15B is described.

First, when the scan line 5031 is selected with the scan line drivercircuit 503 illustrated in FIG. 14, a scan signal is inputted from thescan line driver circuit 503, thereby turning the transistor 611 on.

At this time, a potential of the gate terminal of the transistor 614 anda potential of the first terminal of the capacitor 613 each be apotential in accordance with a video signal inputted from the signalline driver circuit 504. The transistor 614 is turned on, and currentflows between the source terminal and the drain terminal of thetransistor 614. Further, voltage at a given level is applied between thefirst terminal and the second terminal of the light-emitting element 615in accordance with the amount of current that flows through thetransistor 614, and an image is displayed with the pixel. The aboveoperation is sequentially performed every scan line 5031, so that datais written to all the pixels. The above is the operation of the pixelillustrated in FIG. 15B.

In the case where a data signal inputted from the signal line 5041 tothe pixel is a digital signal, the pixel is brought into alight-emitting state or a non-light-emitting state by switching on andoff of the transistor. Thus, grayscale can be displayed using an areagrayscale method or a time ratio grayscale method. An area grayscalemethod refers to a driving method in which one pixel is divided into aplurality of subpixels and the subpixels each having the structureillustrated in FIG. 15B are independently driven based on data signalsso that grayscale is expressed. Further, a time ratio grayscale methodrefers to a driving method in which a period during which a pixel emitslight is controlled, so that the grayscale is expressed.

The response speed of the light-emitting element 615 is higher than thatof the liquid crystal element 612 illustrated in FIG. 15A, or the like,for example. Therefore, the light-emitting element 615 is suitable for atime ratio grayscale method. Specifically, in the case of displaying animage with a time ratio grayscale method, one frame period is dividedinto a plurality of subframe periods. Then, in accordance with a videosignal, the light-emitting element in the pixel is brought into alight-emitting state or a non-light-emitting state in each subframeperiod. By the division of one frame period into a plurality of subframeperiods, the total length of time in which a pixel actually emits lightin one frame period can be controlled by a video signal, so that thegrayscale can be expressed.

Next, examples of a structure of a transistor in a driver circuit suchas the scan line driver circuit 503 or the signal line driver circuit504, or a structure of a transistor in the pixel 5051 of the displaydevice illustrated in FIG. 14 are described with reference to FIGS. 16Aand 16B. FIGS. 16A and 16B are cross-sectional views each illustratingan example of the structure of the transistor in the pixel of thedisplay device illustrated in FIG. 14.

A transistor illustrated in FIG. 16A includes a conductive layer 601, aninsulating layer 602, a conductive layer 603 a, a conductive layer 603b, and a semiconductor layer 604.

The conductive layer 601 is provided over a formation surface (in FIG.16A, a substrate 600). The conductive layer 601 has a function as a gateelectrode. Further, the conductive layer 601 and the semiconductor layer604 are arranged to overlap with each other in the plane view, wherebythe conductive layer 601 can have a function as a light-blocking layerwhich reduces light that enters the semiconductor layer 604. With theconductive layer 601 functioning as a light-blocking layer,deterioration of the semiconductor layer 604 due to light can besuppressed. Therefore, a desired function can be obtained even when thesemiconductor layer 604 is formed using an oxide semiconductor material.

The insulating layer 602 is provided over the conductive layer 601. Theinsulating layer 602 has a function as a gate insulating layer.

The conductive layer 603 a and the conductive layer 603 b are providedover parts of the insulating layer 602. The conductive layer 603 a has afunction as one of a source electrode and a drain electrode, and theconductive layer 603 b has a function as the other of the sourceelectrode and the drain electrode. For example, in the case where theconductive layer 603 a has a function as the source electrode, theconductive layer 603 b has a function as the drain electrode.

In the transistor illustrated in FIG. 16A, the conductive layer 603 aand the conductive layer 603 b are provided over the conductive layer601 with the insulating layer 602 interposed therebetween. However, thepresent invention is not limited thereto. For example, a semiconductordevice of Embodiment 2 may have a structure in which the conductivelayer 603 a and the conductive layer 603 b are provided over parts ofthe insulating layer 602, below which the conductive layer 601 is notformed.

The semiconductor layer 604 is provided over the insulating layer 602with the conductive layer 603 a and the conductive layer 603 binterposed therebetween. The semiconductor layer 604 is a layer in whicha channel is formed (such a layer is also referred to as a channelformation layer).

Further, the structure of the transistor of Embodiment 2 is not limitedto the structure illustrated in FIG. 16A and may be a structureillustrated in FIG. 16B.

A transistor illustrated in FIG. 16B includes the conductive layer 601,the insulating layer 602, the conductive layer 603 a, the conductivelayer 603 b, the semiconductor layer 604, a buffer layer 605 a, and abuffer layer 605 b.

The transistor illustrated in FIG. 16B has a structure in which thebuffer layers are added to the structure of the transistor illustratedin FIG. 16A. Therefore, the description of the components of thetransistor illustrated in FIG. 16A is applied to the correspondingcomponents of the transistor illustrated in FIG. 16B as appropriate.Components of the transistor illustrated in FIG. 16B which are differentfrom those of the transistor illustrated in FIG. 16A are describedbelow.

The buffer layer 605 a is provided over the conductive layer 603 a, andthe buffer layer 605 b is provided over the conductive layer 603 b. Thebuffer layer 605 a and the buffer layer 605 b each function as a layerwhich facilitates electrical connection between the conductive layer 603a or the conductive layer 603 b and the semiconductor layer 604. Notethat the buffer layer 605 a and the buffer layer 605 b are notnecessarily provided over the conductive layer 603 a and the conductivelayer 603 b, and may be electrically connected to the conductive layer603 a and the conductive layer 603 b.

The buffer layer 605 a and the buffer layer 605 b can be formed usingthe same material and the same manufacturing method as the semiconductorlayer 604, for example. Further, the buffer layer 605 a and the bufferlayer 605 b preferably have the same conductivity as the semiconductorlayer 604 or have higher conductivity than the semiconductor layer 604.For example, a semiconductor film is formed, and a resist mask isselectively formed over the semiconductor film by a photolithographystep so that the semiconductor film is etched, whereby the buffer layer605 a and the buffer layer 605 b can be formed.

The transistor illustrated in FIG. 16B is a so-called a bottom-contacttransistor in which a semiconductor layer to be a channel formationlayer is provided above a source electrode and a drain electrode. Withthe bottom-contact transistor, a large contact area of the sourceelectrode and the drain electrode with the semiconductor layer can beobtained. Note that the transistor of Embodiment 2 is not limited to abottom-contact transistor, and can be a so-called top-contact transistorin which a source electrode and a drain electrode are provided over asemiconductor layer to be a channel formation layer.

The transistors illustrated in FIGS. 16A and 16B are so-calledbottom-gate transistors in each of which a source electrode, a drainelectrode, and a channel formation layer are provided over a gateelectrode. With the bottom-gate transistor, a gate insulating layer anda semiconductor layer can be formed successively.

Note that the structure of the semiconductor device of Embodiment 2 isnot limited to a bottom-gate structure, and can be a top-gate structure.The structure of a top-gate transistor is described with reference toFIG. 17. FIG. 17 is a cross-sectional view illustrating an example ofthe structure of a transistor in the pixel of the display deviceillustrated in FIG. 14.

The transistor illustrated in FIG. 17 includes the conductive layer 601,the insulating layer 602, the conductive layer 603 a, the conductivelayer 603 b, and the semiconductor layer 604.

The semiconductor layer 604 is provided over a formation surface (inFIG. 17, the substrate 600). The semiconductor layer 604 is a layer inwhich a channel is formed (such a layer is also referred to as a channelformation layer).

The insulating layer 602 is provided over the substrate 600 with thesemiconductor layer 604 interposed therebetween. The insulating layer602 has a function as a gate insulating layer.

The conductive layer 601 is provided over the semiconductor layer 604with the insulating layer 602 interposed therebetween. The conductivelayer 601 has a function as a gate electrode.

The insulating layer 606 is provided over the insulating layer 602 withthe conductive layer 601 interposed therebetween. The insulating layer606 has a function as a protective layer which protects the conductivelayer 601.

The conductive layer 603 a and the conductive layer 603 b are providedover parts of the insulating layer 606. The conductive layer 603 a iselectrically connected to the semiconductor layer 604 through an openingportion provided in the insulating layer 602 and the insulating layer606. The conductive layer 603 b is electrically connected to thesemiconductor layer 604 through an opening portion provided in theinsulating layer 602 and the insulating layer 606. The conductive layer603 a has a function as one of the source electrode and the drainelectrode, and the conductive layer 603 b has a function as the other ofthe source electrode and the drain electrode. For example, in the casewhere the conductive layer 603 a has a function as the source electrode,the conductive layer 603 b has a function as the drain electrode.

Next, examples of structures of the scan line driver circuit 503 and thesignal line driver circuit 504 in the display device illustrated in FIG.14 are described with reference to FIGS. 18A and 18B. FIGS. 18A and 18Billustrate examples of the structures of the driver circuits in thedisplay device illustrated in FIG. 14. FIG. 18A is a block diagramillustrating an example of a structure of the scan line driver circuit,and FIG. 18B is a block diagram illustrating an example of the structureof the signal line driver circuit.

The scan line driver circuit 503 illustrated in FIG. 18A includes ashift register 711, a level shifter 712, and a buffer circuit 713.

A signal such as a gate start pulse (GSP) or a gate clock signal (GCK)is inputted to the shift register 711.

The level shifter 712 has a function of generating a plurality ofsignals which are different depending on use, in accordance with asignal inputted.

The buffer circuit 713 has a function of amplifying an output signal ofthe level shifter 712 which is inputted to the buffer circuit 713. Forexample, the buffer circuit 713 can have an operational amplifier or thelike.

The signal line driver circuit 504 illustrated in FIG. 18B includes ashift register 721, a latch circuit 722, a level shifter 723, a buffercircuit 724 and a D/A converter circuit 725.

A signal such as a source start pulse (SSP) or a source clock signal(SCK) is inputted to the shift register 721.

Image data signals (DATA) and latch signals (LAT) are inputted to thelatch circuit 722. The image data signals inputted are held for acertain period of time in the latch circuit, and the signals which hadbeen held are simultaneously outputted to the pixel portion illustratedin FIG. 14. This is referred to as line sequential driving.

The level shifter 723 has a function of generating a plurality ofsignals which are different depending on use, in accordance with asignal inputted.

The buffer circuit 724 has a function of amplifying a signal inputted,and can have an operational amplifier or the like, for example.

The D/A converter circuit 725 has a function of converting a digitalsignal into an analog signal in the case where a signal inputted is adigital signal. Note that in the case where a signal inputted is ananalog signal, the D/A converter circuit 725 is not necessarilyprovided.

The driver circuit can include a semiconductor element formed using anoxide semiconductor material, for example. As the semiconductor element,a transistor, a capacitor, a resistor, or the like can be given, forexample. In the case where a transistor is used, for example, atransistor having the same structure as a transistor in a pixel can beused.

Next, an example of a structure of the terminal portion 506 is describedwith reference to FIGS. 19A and 19B. FIGS. 19A and 19B illustrate anexample of the structure of the terminal portion 506 in the displaydevice illustrated in FIG. 14. FIG. 19A is a top view and FIG. 19B is across-sectional view taken along line B1-B2 of FIG. 19A.

The terminal portion 506 illustrated in FIG. 19A includes a terminal 910a, a terminal 910 b, and a terminal 910 c. The terminal portion 506further includes a semiconductor layer 9032, an insulating layer 905,and an insulating layer 906, as illustrated in FIG. 19B.

The terminal 910 a includes a conductive layer 901 a and a conductivelayer 902 a. The terminal 910 b includes a conductive layer 901 b and aconductive layer 902 b. The terminal 910 c includes a conductive layer901 c and a conductive layer 902 c.

Further, as illustrated in FIG. 19B, the insulating layer 905 isprovided over the conductive layer 902 a, the conductive layer 902 b,and the conductive layer 902 c. The semiconductor layer 9032 is providedover the conductive layer 902 a, the conductive layer 902 b, and theconductive layer 902 c with the insulating layer 905 interposedtherebetween. The insulating layer 906 is provided over thesemiconductor layer 9032. The conductive layer 901 a, the conductivelayer 901 b, and the conductive layer 901 c are provided over thesemiconductor layer 9032 with the insulating layer 906 interposedtherebetween. That is, a structure in which, in the plane view, thesemiconductor layer 9032 overlaps with the conductive layer 901 a, theconductive layer 901 b, and the conductive layer 901 c and thesemiconductor layer 9032 overlaps with the conductive layer 902 a, theconductive layer 902 b, and the conductive layer 902 c, is obtained.

The conductive layer 901 a to the conductive layer 901 c each have afunction as a terminal electrode of a semiconductor device, for example.The conductive layer 901 a to the conductive layer 901 c can be formedusing a material which can be applied to a conductive film used for theconductive layer 601 illustrated in FIGS. 16A and 16B, for example.Therefore, the conductive layer 601 and the conductive layer 901 a tothe conductive layer 901 c can be formed using one conductive film inthe same step, for example.

The conductive layer 902 a is electrically connected to the conductivelayer 901 a through an opening portion 904 a. The conductive layer 902 bis electrically connected to the conductive layer 901 b through anopening portion 904 b. The conductive layer 902 c is electricallyconnected to the conductive layer 901 c through an opening portion 904c. The conductive layer 902 a to the conductive layer 902 c each have afunction as, for example, a wiring for supplying a signal to the drivercircuit or the pixel portion of the display device (such a wiring isalso referred to as a signal line, a source line or a gate line), or awiring for supplying power (such a wiring is also referred to as a powersupply line). The conductive layer 902 a to the conductive layer 902 ccan be formed using a material which can be applied to a conductive filmused for the conductive layer 603 a and the conductive layer 603 b whichare illustrated in FIGS. 16A and 16B, for example. Therefore, theconductive layer 603 a, the conductive layer 603 b, and the conductivelayer 902 a to the conductive layer 902 c can be formed using oneconductive film in the same step, for example.

The semiconductor layer 9032 can be formed using a material which can beapplied to a semiconductor film used for the semiconductor layer 604illustrated in FIGS. 16A and 16B, for example. Therefore, thesemiconductor layer 604 and the semiconductor layer 9032 can be formedusing one semiconductor film in the same step, for example.

The insulating layer 905 and the insulating layer 906 can each be formedusing an insulating layer or the like including silicon or the like, forexample. Therefore, the insulating layer 602 functioning as a gateinsulating layer of the transistor which is illustrated in FIGS. 16A and16B and the insulating layer 905 functioning as a dielectric layer canbe formed using one insulating film, for example.

As illustrated in FIGS. 19A and 19B as an example, the semiconductordevice of Embodiment 2 includes a capacitor formed using an oxidesemiconductor layer, a conductive layer forming a wiring or anelectrode, and an insulating layer provided between the oxidesemiconductor layer and the conductive layer. The capacitor has afunction as a filter circuit for reducing the adverse effects of noise.

Further, the semiconductor device of Embodiment 2 includes a pluralityof capacitors each formed using the oxide semiconductor layer, theconductive layer forming a wiring or an electrode, and the insulatinglayer provided between the oxide semiconductor layer and the conductivelayer. In addition, the oxide semiconductor layer is provided as acontinuous oxide semiconductor layer between a plurality of terminals.Therefore, it is not necessary to perform minute patterning, whereby amanufacturing process can be simplified. Note that the structure is notlimited to the structure illustrated in FIGS. 19A and 19B, and thedisplay device of Embodiment 2 can have a structure in which an oxidesemiconductor layer is provided every terminal.

Next, the operation of the terminal portion in the display device ofEmbodiment 2 is described. Here, the operation of the terminal portionwhen a signal is inputted to the terminal portion is described. The casewhere the absolute value of voltage of an input signal is smaller thanor equal to a given value and the case where the absolute value of thevoltage of the input signal is larger than the given value areseparately described. Note that the given value can be set asappropriate in consideration of the specification of the functionalcircuit, or the like, for example.

The capacitance of the capacitor is changed in accordance with voltageof an input signal. In the case where the absolute value of voltage ofan input signal is smaller than or equal to a given value, thecapacitance of the capacitor is smaller than a given value, whichresults in a small delay of an output signal with respect to the inputsignal of the filter circuit. Thus, the effect of filtering is small.Note that the given value of an absolute value of voltage applied to thecapacitor, the given value of capacitance of the capacitor, and thegiven value of delay time can be set as appropriate in accordance withthe specification of the semiconductor device.

In the case where the absolute value of voltage of an input signal islarger than a given value, the absolute value of voltage applied betweenthe terminals of the capacitor is larger than a given value, and thecapacitance of the capacitor is larger than a given value in accordancewith the input signal, which results in a long delay of an output signalwith respect to the input signal of the filter circuit. Thus, the effectof filtering with respect to noise is larger than that of the case wherethe absolute value of voltage of the input signal is smaller than orequal to a given value. The above is the operation of the semiconductordevice of Embodiment 2.

As described above, the capacitance of a capacitor is made low in thecase where a signal with voltage whose absolute value is smaller than orequal to a given value is inputted, so that the delay of a signalinputted to a functional circuit is reduced. In addition, thecapacitance of a capacitor is made high in the case where a signal withvoltage whose absolute value is larger than or equal to a given value isinputted, so that the delay of a signal inputted to a functional circuitis increased. Accordingly, adverse effects on actual operation can bereduced, and adverse effects on an input signal due to the noise can bereduced in the case where noise is generated, for example.

A driver circuit or a pixel portion which includes a semiconductorelement using an oxide semiconductor often needs a comparatively higherlevel of operating voltage than a functional circuit including asemiconductor element using a polycrystalline semiconductor, forexample. Therefore, the amplitude of an input signal tends to be high.However, as in the semiconductor device of Embodiment 2, a filtercircuit using a capacitor is provided between a terminal electrode and adriver circuit or a pixel portion of a display device which areelectrically connected to each other, whereby adverse effects of noisecan be reduced even in a display device including a semiconductorelement using an oxide semiconductor.

Note that Embodiment 2 can be combined with any of Embodiment 1 andEmbodiments 3 to 6, as appropriate.

Embodiment 3

In Embodiment 3, a method for manufacturing a display device which is anembodiment of the present invention is described.

As an example of a method for manufacturing a display device ofEmbodiment 3, a method for manufacturing a terminal portion and asemiconductor element portion included in a pixel, a driver circuit, andthe like is described with reference to FIGS. 20A and 20B, FIGS. 21A and21B, and FIGS. 22A and 22B. FIGS. 20A and 20B, FIGS. 21A and 21B, andFIGS. 22A and 22B are cross-sectional views illustrating the example ofthe method for manufacturing a terminal portion and a semiconductorelement portion of the display device of Embodiment 3. Note that in themethod for manufacturing a terminal portion and a semiconductor elementportion of the display device, which is illustrated in FIGS. 20A and20B, FIGS. 21A and 21B, and FIGS. 22A and 22B, the case of forming atransistor as a semiconductor element is described as an example.

First, as illustrated in FIG. 20A, a substrate 1000 is prepared, and aconductive layer 1001 a and a conductive layer 1001 b are formed overthe substrate 1000. For example, a conductive film is formed over thesubstrate 1000, and the conductive film is selectively etched, wherebythe conductive layer 1001 a and the conductive layer 1001 b can beformed.

As the substrate 1000, a glass substrate, a quartz substrate, a ceramicsubstrate, a sapphire substrate, or the like can be used, for example.As the glass substrate, a non-alkali glass substrate or the like can beused. As the non-alkali glass substrate, a substrate using bariumborosilicate glass, aluminoborosilicate glass, aluminosilicate glass, orthe like is given. A plastic substrate can be alternatively used as thesubstrate 1000 if it can withstand the temperature of each treatmentused for manufacturing the semiconductor device. Further, in the casewhere a surface is subjected to insulation treatment, a semiconductorsubstrate, a metal substrate, a stainless steel substrate, or the likecan be alternatively used.

The conductive film can be formed using, for example, a conductive filmincluding a conductive material such as molybdenum, titanium, chromium,tantalum, tungsten, aluminum, copper, neodymium, or scandium, or analloy material which contains any of these materials as a maincomponent. Further, for example, a sputtering method can be used forforming the conductive film. Furthermore, for example, a resist mask isformed over the conductive film by a photolithography step and theconductive film is selectively etched, whereby the conductive layer 1001a and the conductive layer 1001 b can be formed.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used as a sputtering power source, a DCsputtering method, and a pulsed DC sputtering method in which a bias isapplied in a pulsed manner.

In addition, there is also a multi-source sputtering apparatus in whicha plurality of targets of different materials can be set. With themulti-source sputtering apparatus, films of different materials can beformed to be stacked in the same chamber, or a film of plural kinds ofmaterials can be formed by electric discharge at the same time in thesame chamber.

In addition, there are a sputtering apparatus provided with a magnetsystem inside the chamber and used for a magnetron sputtering, and asputtering apparatus used for an ECR sputtering in which plasmagenerated with the use of microwaves is used without using glowdischarge.

Furthermore, as a deposition method by sputtering, there are also areactive sputtering method in which a target substance and a sputteringgas component are chemically reacted with each other during depositionto form a thin compound film thereof, and a bias sputtering in whichvoltage is also applied to a substrate during deposition.

Note that for the etching, either dry etching or wet etching can beused. As an etching apparatus used for the dry etching, an etchingapparatus using a reactive ion etching method (an RIE method), or a dryetching apparatus using a high-density plasma source such as ECR(electron cyclotron resonance) or ICP (inductively coupled plasma) canbe used. Furthermore, as a dry etching apparatus by which electricdischarge is likely to be homogeneous in a large area as compared to thecase of an ICP etching apparatus, there is an ECCP (enhancedcapacitively coupled plasma) mode etching apparatus in which an upperelectrode is grounded, a power source with a frequency of 13.56 MHz isconnected to a lower electrode, and a power source with a frequency of3.2 MHz is connected to the lower electrode. This ECCP mode etchingapparatus can be applied even when, as the substrate, a substrate, thesize of which exceeds 3 m of the tenth generation, is used, for example.

The conductive film can be formed using a stacked-layer film in whichconductive films including any of the above materials are stacked. Here,there is a problem in that an aluminum film alone has low heatresistance, high tendency to corrosion, or the like. Therefore, in thecase where the conductive layer 1001 a and the conductive layer 1001 bare formed using an aluminum film as one of the conductive films, forexample, the conductive film is preferably formed using a stacked-layerfilm in which the aluminum film and a heat-resistant conductive film arestacked, whereby heat resistance, corrosion resistance, or the like canbe increased more than a conductive film formed using only an aluminumfilm. The heat-resistant conductive film can be formed using an elementselected from titanium, tantalum, tungsten, molybdenum, chromium,neodymium, and scandium, an alloy containing any of the elements, analloy film combining any of the elements, or a nitride containing any ofthe elements.

Examples of the conductive film having a stacked-layer structure includethe following: a conductive film in which a molybdenum film is stackedover an aluminum film; a conductive film in which a molybdenum film isstacked over a copper film; a conductive film in which a titaniumnitride film or a tantalum nitride film is stacked over a copper film;and a conductive film in which a titanium nitride film and a molybdenumfilm are stacked.

As illustrated in FIG. 20B, an insulating layer 1002 is formed over thesubstrate 1000, the conductive layer 1001 a, and the conductive layer1001 b. Further, the insulating layer 1002 is selectively etched,whereby an opening portion is formed in the insulating layer 1002, sothat part of the conductive layer 1001 a is exposed.

The insulating layer 1002 can be formed using, for example, aninsulating film including oxide, nitride, oxynitride, or nitride oxideof silicon, aluminum, yttrium, tantalum, or hafnium; or a compoundcontaining at least two of such materials.

As illustrated in FIG. 21A, a conductive layer 1003 a and a conductivelayer 1003 b are formed over part of the conductive layer 1001 b withthe insulating layer 1002 interposed therebetween. For example, aconductive film is formed over the insulating layer 1002 and theconductive film is selectively etched, whereby the conductive layer 1003a and the conductive layer 1003 b can be formed.

The conductive layer 1003 a and the conductive layer 1003 b can beformed using a conductive film which is formed by, for example, asputtering method, a vacuum evaporation method, or the like, using amaterial formed using a metal including an element selected fromaluminum (Al), copper (Cu), titanium (Ti), tantalum (Ta), tungsten (W),molybdenum (Mo), chromium (Cr), neodymium (Nd), and scandium (Sc); analloy including any of the above elements as its component; nitrideincluding any of the above elements as its component; or the like. Forexample, a resist mask is selectively formed over the conductive film bya photolithography step and the conductive film is etched, whereby theconductive layer 1003 a and the conductive layer 1003 b can be formed.

For example, the conductive film can be formed using a single-layer filmof a molybdenum film or a titanium film. Alternatively, the conductivefilm can be formed using a stacked-layer film, and for example, theconductive film can be formed using a stack including an aluminum filmand a titanium film. A three-layer structure in which a titanium film,an aluminum film, and a titanium film are sequentially stacked may beused. A three-layer structure in which a molybdenum film, an aluminumfilm, and a molybdenum film are sequentially stacked may be used. As thealuminum films used for these stacked-layer structures, an aluminum filmincluding neodymium (an Al—Nd film) may be used. Further, the conductivefilm can be formed using an aluminum film including silicon.

The conductive film may be formed using a material having highconductivity and a light-transmitting property. As such a material,indium tin oxide (ITO), indium tin oxide containing silicon oxide(ITSO), organoindium, organotin, zinc oxide (ZnO), or the like can beused, for example.

As illustrated in FIG. 21B, a semiconductor layer 1005 a is formed overthe conductive layer 1001 a with the insulating layer 1002 interposedtherebetween, and a semiconductor layer 1005 b is formed over theconductive layer 1003 a and the conductive layer 1003 b and is formedover the conductive layer 1001 b with the insulating layer 1002interposed between the semiconductor layer 1005 b and the conductivelayer 1001 b. For example, a semiconductor film is formed over theinsulating layer 1002 and the semiconductor film is selectively etched,whereby the semiconductor layer 1005 a and the semiconductor layer 1005b can be formed.

As a semiconductor film which can be used for forming the semiconductorlayer 1005 a and the semiconductor layer 1005 b, an oxide semiconductorfilm or the like can be used, for example. As the oxide semiconductorfilm, an oxide semiconductor film and the like including any of Sn, In,and Zn can be given, for example. Further, in the case of using an oxidesemiconductor film, an oxide semiconductor film including an amorphouscomponent can be used. Furthermore, an oxide semiconductor filmincluding a crystal grain (nanocrystal) can be used. At this time, thecrystal grain (nanocrystal) in the oxide semiconductor film has adiameter of 1 nm to 10 nm, typically approximately 2 nm to 4 nm.

As an oxide semiconductor, an oxide semiconductor whose compositionformula is represented by InMO₃(ZnO)_(m) (m>0) can be alternativelyused, for example. It is particularly preferable to use anIn—Ga—Zn—O-based oxide semiconductor among oxide semiconductors whosecomposition formulas are represented by InMO₃(ZnO)_(m) (m>0). Note thatM represents one or more of metal elements selected from gallium (Ga),iron (Fe), nickel (Ni), manganese (Mn), or cobalt (Co). As an example, Mmay be Ga or may include the above metal element in addition to Ga, forexample, M may be Ga and Ni, or Ga and Fe. Moreover, in the above oxidesemiconductors, in some cases, a transition metal element such as Fe orNi or an oxide of the transition metal is contained as an impurityelement in addition to a metal element contained as M.

Note that in the case of using an In—Ga—Zn—O-based non-single-crystalfilm, after an In—Ga—Zn—O-based non-single-crystal film is formed, heattreatment is preferably performed at 100° C. to 600° C., typically 200°C. to 400° C. For example, heat treatment is performed at 350° C. forone hour under the atmospheric air or a nitrogen atmosphere, wherebyrearrangement of an In—Ga—Zn—O-based oxide semiconductor film isperformed at the atomic level. By the heat treatment (including opticalannealing or the like), strain energy which inhibits carrier movement inthe oxide semiconductor film can be released. Note that there is noparticular limitation on timing of the above heat treatment as long asthe heat treatment is performed after formation of the oxidesemiconductor film. Further, since the terminal portion in the displaydevice of Embodiment 3 has a structure in which, in the plane view, theoxide semiconductor layer overlaps with the conductive layer, the oxidesemiconductor layer can be heated efficiently by heat treatment.Furthermore, for example, when the terminal portion in the displaydevice of Embodiment 3 has a structure in which the oxide semiconductorlayer is in contact with the conductive layer in a manner similar to thesemiconductor device illustrated in FIGS. 2A and 2B of Embodiment 1, theoxide semiconductor layer can be heated more efficiently by heattreatment.

The In—Ga—Zn—O-based non-single-crystal film is subjected to heattreatment at 200° C. to 500° C., typically 300° C. to 400° C. for 10minutes to 100 minutes after being formed by a sputtering method, forexample. By X-ray diffraction (XRD) analysis after heat treatment, anamorphous structure is observed as a crystal structure of theIn—Ga—Zn—O-based non-single-crystal film even after heat treatment.

As the oxide semiconductor film, any of the following oxidesemiconductor films can be applied in addition to the above: anIn—Sn—Zn—O-based oxide semiconductor film; an Al—In—Zn—O-based oxidesemiconductor film; a Ga—Sn—Zn—O-based oxide semiconductor film; anAl—Ga—Zn—O-based oxide semiconductor film; an Al—Sn—Zn—O-based oxidesemiconductor film; an In—Zn—O-based oxide semiconductor film; aSn—Zn—O-based oxide semiconductor film; an Al—Zn—O-based oxidesemiconductor film; an In—O-based oxide semiconductor film; a Sn—O-basedoxide semiconductor film; and a Zn—O-based oxide semiconductor film.

For example, a resist mask is selectively formed over a semiconductorfilm by a photolithography step and then the semiconductor film isetched, whereby the semiconductor layer 1005 a and the semiconductorlayer 1005 b can be formed.

As illustrated in FIG. 22A, an insulating layer 1006 is formed over theinsulating layer 1002 with the conductive layer 1003 a, the conductivelayer 1003 b, the semiconductor layer 1005 a, and the semiconductorlayer 1005 b interposed therebetween. Preferably, the insulating layer1006 is formed over the top surfaces and the side surfaces of theconductive layer 1003 a and the conductive layer 1003 b, and on the topsurfaces and the side surfaces of the semiconductor layer 1005 a and thesemiconductor layer 1005 b.

The insulating layer 1006 can have a function as a dielectric layer of acapacitor in the terminal portion, and can have a function as aprotective layer of a transistor in the semiconductor element portion,for example. The insulating layer 1006 can be formed using a materialwhich can be used for the insulating layer 1002, for example.

As illustrated in FIG. 22B, a conductive layer 1007 a is formed to beelectrically connected to the conductive layer 1001 a through an openingportion provided in the insulating layer 1002 and the insulating layer1006, and a conductive layer 1007 b is formed to be electricallyconnected to the conductive layer 1003 b through an opening portionprovided in the insulating layer 1006. For example, a conductive film isformed over the insulating layer 1006 and the conductive film isselectively etched, whereby the conductive layer 1007 a and theconductive layer 1007 b can be formed.

At this time, the conductive layer 1007 a is preferably formed over thesemiconductor layer 1005 a with the insulating layer 1006 interposedtherebetween, whereby a capacitor can be formed using the semiconductorlayer 1005 a, the insulating layer 1006, and the conductive layer 1007a.

The conductive layer 1007 a and the conductive layer 1007 b can beformed using a conductive film having a light-transmitting propertyincluding indium oxide containing tungsten oxide, indium zinc oxidecontaining tungsten oxide, indium oxide containing titanium oxide,indium tin oxide containing titanium oxide, indium tin oxide, indiumzinc oxide, indium tin oxide to which silicon oxide is added, or thelike.

For example, a resist mask is selectively formed over a conductive filmby a photolithography step and the conductive film is etched, wherebythe conductive layer 1007 a and the conductive layer 1007 b can beformed.

Through the above steps, the terminal portion and the semiconductorelement portion can be formed.

As illustrated in FIGS. 20A and 20B, FIGS. 21A and 21B, and FIGS. 22Aand 22B as an example, according to the method for manufacturing thedisplay device of Embodiment 3, a semiconductor element in asemiconductor element portion included in a pixel portion, a capacitorin a terminal portion, and the like can be formed through the samesteps. Thus, the increase of the number of manufacturing steps can beprevented.

Note that Embodiment 3 can be combined with any of Embodiments 1 and 2and Embodiments 4 to 6, as appropriate.

Embodiment 4

In Embodiment 4, as one mode of a display device according to anembodiment of the present invention, an appearance and a cross sectionof a light-emitting panel is described with reference to FIGS. 23A and23B. FIGS. 23A and 23B illustrate an example of a structure of alight-emitting panel in Embodiment 4. FIG. 23A is a top view and FIG.23B is a cross-sectional view taken along line H-I of FIG. 23A.

The light-emitting panel illustrated in FIGS. 23A and 23B includes apixel portion 6502, signal line driver circuits 6503 a and 6503 b, andscan line driver circuits 6504 a and 6504 b over a first substrate 6501,and a sealant 6505 is provided to surround the pixel portion 6502, thesignal line driver circuits 6503 a and 6503 b, and the scan line drivercircuits 6504 a and 6504 b. A second substrate 6506 is provided over thepixel portion 6502, the signal line driver circuits 6503 a and 6503 b,and the scan line driver circuits 6504 a and 6504 b. Accordingly, thepixel portion 6502, the signal line driver circuits 6503 a and 6503 b,and the scan line driver circuits 6504 a and 6504 b are sealed togetherwith a filler 6507, by the first substrate 6501, the sealant 6505, andthe second substrate 6506. In such a manner, it is preferable that thepixel portion 6502, the signal line driver circuits 6503 a and 6503 b,and the scan line driver circuits 6504 a and 6504 b be packed (sealed)with a protective film (such as an attachment film or an ultravioletcurable resin film) or a cover material with high air-tightness andlittle degasification so as not to be exposed to the air.

The pixel portion 6502, the signal line driver circuits 6503 a and 6503b, and the scan line driver circuits 6504 a and 6504 b provided over thefirst substrate 6501 each include a plurality of TFTs, and a TFT 6510included in the pixel portion 6502 and a TFT 6509 included in the signalline driver circuit 6503 a are illustrated as an example in FIG. 23B. Asa TFT included in each of the pixel portion 6502, the signal line drivercircuits 6503 a and 6503 b, and the scan line driver circuits 6504 a and6504 b, any of the transistors in above Embodiments can be used. In thesemiconductor device illustrated in FIGS. 23A and 23B, the structureillustrated in FIG. 16A is used as an example of a transistor. As aspecific description thereof, the description of FIG. 16A is appliedthereto as appropriate. Note that in FIGS. 23A and 23B, the TFTs 6509and 6510 are n-channel TFTs.

In the light-emitting panel illustrated in FIGS. 23A and 23B, in orderto reduce surface unevenness of the TFT and improve the reliability ofthe TFT, the TFT is covered with insulating layers (insulating layers6551 and 6552) functioning as a protective layer and a planarizinginsulating film.

Here, the insulating layer 6551 having a stacked-layer structure isformed as the protective layer. As a first layer of the insulating layer6551, a silicon oxide film is formed by a sputtering method. The use ofthe silicon oxide film as the protective layer is effective inpreventing hillocks in an aluminum film used as a source electrode and adrain electrode.

Moreover, as a second layer of the insulating layer 6551, a siliconnitride film is formed by a sputtering method. The use of the siliconnitride film as the protective layer can prevent mobile ions such assodium from entering the semiconductor region and changing electriccharacteristics of the TFT.

Further, after the protective layer is formed, annealing (250° C. to400° C.) may be performed on the semiconductor layer.

In addition, the insulating layer 6552 is formed as the planarizinginsulating film. An organic material having heat resistance, such aspolyimide, acrylic, benzocyclobutene, polyamide, or epoxy can be usedfor the insulating layer 6552. Other than such organic materials, it isalso possible to use a low-dielectric constant material (a low-kmaterial), a siloxane-based resin, phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), or the like. Note that the insulatinglayer 6552 may be formed using a stack including a plurality ofinsulating films formed using these materials.

Note that the siloxane-based resin corresponds to a resin including aSi—O—Si bond formed using a siloxane-based material as a startingmaterial. The siloxane-based resin may include as a substituent anorganic group (e.g., an alkyl group or an aryl group) or a fluoro group.In addition, the organic group may include a fluoro group.

There is no particular limitation on the method of forming theinsulating layer 6552, and the insulating layer 6552 can be formed byany of the following methods and means depending on its material: asputtering method, an SOG method, spin coating, dipping, spray coating,a droplet discharging method (e.g., an ink jet method, screen printing,or offset printing), a doctor knife, a roll coater, a curtain coater, aknife coater, and the like. In the case where the insulating layer 6552is formed using a material solution, the semiconductor layer may beannealed (at 300° C. to 400° C.) at the same time of a baking step. Thestep of baking the insulating layer 6552 serves to anneal thesemiconductor layer, whereby the display device can be efficientlymanufactured.

Further, a light-emitting element 6511 is provided over the TFT 6510.The light-emitting element 6511 is electrically connected to a sourceelectrode or a drain electrode of the TFT 6510, and has a stacked-layerstructure including a first electrode 6517 as a pixel electrode, anelectroluminescence layer 6512, and a second electrode 6513. Note thatthe light-emitting element 6511 is not limited to the structureillustrated in FIGS. 23A and 23B. In a display device of Embodiment 4,the structure of the light-emitting element 6511 can be changed asappropriate in accordance with a direction of light emitted from thelight-emitting element 6511, or the like.

A partition wall 6520 is provided over the first electrode 6517.Further, the light-emitting panel illustrated in FIGS. 23A and 23Bincludes the electroluminescence layer 6512 so as to be electricallyconnected to the first electrode 6517 through an opening portionprovided in the partition wall 6520, and includes the second electrode6513 over the electroluminescence layer 6512. The partition wall 6520 ispreferably formed using a photosensitive material. An opening portion ispreferably formed in a layer of the photosensitive material over thefirst electrode 6517 such that a sidewall of the opening portion isformed as an inclined surface with continuous curvature, whereby thepartition wall 6520 is preferably formed.

The electroluminescence layer 6512 can be formed using the same materialas the electroluminescence layer included in the light-emitting element615 illustrated in FIG. 15B. The electroluminescence layer 6512 may beformed using a single layer or a stack including a plurality of layers.

In the light-emitting panel illustrated in FIGS. 23A and 23B, in orderto prevent oxygen, hydrogen, moisture, carbon dioxide, or the like fromentering the light-emitting element 6511, a protective layer may beformed over the second electrode 6513 and the partition wall 6520. Theprotective layer can be formed using a silicon nitride film, a siliconnitride oxide film, a DLC film, or the like.

Various signals and potentials are supplied from FPCs 6518 a and 6518 bto the signal line driver circuits 6503 a and 6503 b, the scan linedriver circuits 6504 a and 6504 b, or the pixel portion 6502.

In the light-emitting panel illustrated in FIGS. 23A and 23B, aconnection terminal electrode 6515 is formed using the same conductivefilm as the first electrode 6517 included in the light-emitting element6511, and a terminal electrode 6516 is formed using the same conductivefilm as gate electrodes included in the TFTs 6509 and 6510.

Further, a semiconductor layer 6550 is provided over the terminalelectrode 6516. The semiconductor layer 6550 has a function as anelectrode of a capacitor included in a filter circuit.

The connection terminal electrode 6515 is electrically connected to aterminal included in the FPC 6518 a through an anisotropic conductivefilm 6519.

As a substrate to be placed in the direction in which light is emittedfrom the light-emitting element 6511, a substrate having alight-transmitting property is preferably used. The substrate having alight-transmitting property can be formed using a material having alight-transmitting property such as a glass plate, a plastic plate, apolyester film, or an acrylic film.

As the filler 6507, an ultraviolet curable resin or a thermosettingresin can be used, as well as an inert gas such as nitrogen or argon.For example, PVC (polyvinyl chloride), acrylic, polyimide, an epoxyresin, a silicone resin, PVB (polyvinyl butyral), or EVA (ethylene vinylacetate) can be used. In the display device illustrated in FIGS. 23A and23B, nitrogen is used as the filler 6507 as an example.

As needed, an optical film such as a polarizing plate, a circularlypolarizing plate (including an elliptically polarizing plate), aretardation plate (a quarter-wave plate or a half-wave plate), or acolor filter may be provided for a surface to which light from thelight-emitting element 6511 is emitted, as appropriate. Further, apolarizing plate or a circularly polarizing plate may be provided withan anti-reflection film. For example, anti-glare treatment by whichreflected light can be diffused by unevenness on the surface so as toreduce the glare can be performed.

The structure of the signal line driver circuits 6503 a and 6503 b andthe scan line driver circuits 6504 a and 6504 b are not limited to thestructures illustrated in FIGS. 23A and 23B. In the display device ofEmbodiment 4, a structure in which a driver circuit including asemiconductor element formed using a single crystal semiconductor filmor a polycrystalline semiconductor film is mounted on another substratemay be used. Further, all or part of the signal line driver circuits6503 a and 6503 b, or all or part of the scan line driver circuits 6504a and 6504 b may be separately formed and mounted.

Through the above steps, a highly reliable light-emitting panel can bemanufactured.

Next, as one mode of the display device in Embodiment 4, an appearanceand a cross section of a liquid crystal panel is described withreference to FIGS. 24A1, 24A2, and 24B. FIGS. 24A1, 24A2, and 24Billustrate an example of a structure of a liquid crystal panel inEmbodiment 4. FIGS. 24A1 and 24A2 are top views and FIG. 24B is across-sectional view taken along line M-N of FIGS. 24A1 and 24A2.

The liquid crystal panel illustrated in FIGS. 24A1, 24A2, and 24Bincludes a pixel portion 6002, a signal line driver circuit 6003, and ascan line driver circuit 6004 over a first substrate 6001, and a sealant6000 and a sealant 6005 are provided so as to surround the pixel portion6002, the signal line driver circuit 6003, and the scan line drivercircuit 6004. A second substrate 6006 is provided over the pixel portion6002 and the scan line driver circuit 6004, and the pixel portion 6002,the scan line driver circuit 6004, and a liquid crystal layer 6008 aresealed with the first substrate 6001, the sealant 6000, the sealant6005, and the second substrate 6006. TFTs 6010 and 6011 and a liquidcrystal element 6013 are included, and, over the first substrate 6001,the TFTs 6010 and 6011 and the liquid crystal element 6013 are sealedwith the sealant 6000 and the sealant 6005 between the first substrate6001 and the second substrate 6006. Furthermore, in a region over thefirst substrate 6001 other than a region surrounded by the sealant 6000and the sealant 6005, the signal line driver circuit 6003 provided overanother substrate is mounted.

Note that the connection method of a driver circuit which is separatelyformed is not particularly limited, and a COG method, a wire bondingmethod, a TAB method, or the like can be used. FIG. 24A1 illustrates anexample of mounting the signal line driver circuit 6003 by a COG method,and FIG. 24A2 illustrates an example of mounting the signal line drivercircuit 6003 by a TAB method.

The pixel portion 6002 and the scan line driver circuit 6004, which areprovided over the first substrate 6001, include a plurality of TFTs.FIG. 24B illustrates the TFT 6010 included in the pixel portion 6002 andthe TFT 6011 included in the scan line driver circuit 6004.

As the TFTs 6010 and 6011, any of the TFTs having the structuresdescribed in above Embodiments can be used. In the liquid crystal panelillustrated in FIGS. 24A1, 24A2, and 24B, a TFT having the structureillustrated in FIG. 16A is used as an example of a TFT. Note that in theliquid crystal panel illustrated in FIGS. 24A1, 24A2, and 24B, the TFTs6010 and 6011 are n-channel TFTs.

Further, a pixel electrode 6030 included in the liquid crystal element6013 is electrically connected to a source electrode or a drainelectrode of the TFT 6010. A counter electrode 6031 of the liquidcrystal element 6013 is formed on the second substrate 6006. A portionwhere the pixel electrode 6030, the counter electrode 6031, and theliquid crystal layer 6008 overlap with each other corresponds to theliquid crystal element 6013. Note that the pixel electrode 6030 and thecounter electrode 6031 are provided with an insulating layer 6032 and aninsulating layer 6033, respectively, each of which has a function as analignment film, and sandwich the liquid crystal layer 6008 with theinsulating layer 6032 and the insulating layer 6033 interposed betweenthe pixel electrode 6030 and the counter electrode 6031.

A spacer 6035 is a columnar partition wall obtained by selective etchingof an insulating film, and is provided in order to control a distance (acell gap) between the pixel electrode 6030 and the counter electrode6031. Alternatively, a spherical spacer may be used. Further, thecounter electrode 6031 is electrically connected to a common potentialline provided over the same substrate as the TFT 6010. The counterelectrode 6031 and the common potential line can be electricallyconnected to each other using a common connecting portion, withconductive particles which are arranged between the pair of substratesinterposed therebetween. Note that the conductive particles arecontained in the sealant 6005.

The liquid crystal panel illustrated in FIGS. 24A1, 24A2, and 24B is anexample of a transmissive liquid crystal display panel; however, thepresent invention is not limited thereto. The liquid crystal displaypanel in Embodiment 4 may also be a reflective liquid crystal displaypanel or a semi-transmissive liquid crystal display panel.

The liquid crystal display panel in Embodiment 4 can have a structure inwhich a polarizing plate is provided on the outer side (on the viewingside) of the substrate and a coloring layer and an electrode used for adisplay element are provided in this order on the inner side thereof, ora structure in which a polarizing plate is provided on the inner sidethereof. The stacked-layer structure of the polarizing plate and thecoloring layer may be set as appropriate in accordance with thematerials of the polarizing plate and the coloring layer and thecondition of the manufacturing process. Further, a light-blocking filmserving as a black matrix may be provided.

In the liquid crystal display panel illustrated in FIGS. 24A1, 24A2, and24B, in order to reduce surface unevenness of the TFTs and to improvethe reliability of the TFTs, the TFTs are covered with insulating layers(an insulating layer 6020 and an insulating layer 6021) functioning as aprotective layer and a planarizing insulating film.

Here, the insulating layer 6020 having a stacked-layer structure isformed as the protective layer. Here, a silicon oxide film is formed asa first layer of the insulating layer 6020 by a sputtering method. Theuse of the silicon oxide film as the protective layer is effective inpreventing hillocks in an aluminum film used as a source electrode and adrain electrode.

Moreover, a silicon nitride film is formed by a sputtering method as asecond layer of the insulating layer 6020. The use of the siliconnitride film as the protective layer can prevent mobile ions such assodium from entering the semiconductor region and changing electriccharacteristics of the TFT.

Further, after the protective layer is formed, annealing (250° C. to400° C.) may be performed on the semiconductor layer.

The insulating layer 6021 is formed as the planarizing insulating film.An organic material having heat resistance, such as polyimide, acrylic,benzocyclobutene, polyamide, or epoxy can be used for the insulatinglayer 6021. Other than such organic materials, it is also possible touse a low-dielectric constant material (a low-k material), asiloxane-based resin, phosphosilicate glass (PSG), borophosphosilicateglass (BPSG), or the like. Note that the insulating layer 6021 may beformed using a stack including a plurality of insulating films formedusing these materials.

There is no particular limitation on the method of forming theinsulating layer 6021, and the insulating layer 6021 can be formed byany of the following methods and means depending on its material: asputtering method, an SOG method, spin coating, dipping, spray coating,a droplet discharging method (e.g., an ink jet method, screen printing,or offset printing), a doctor knife, a roll coater, a curtain coater, aknife coater, and the like. In the case where the insulating layer 6021is formed using a material solution, the semiconductor layer may beannealed (at 300° C. to 400° C.) at the same time of a baking step. Thestep of baking the insulating layer 6021 serves to anneal thesemiconductor layer, whereby a display device can be efficientlymanufactured.

The pixel electrode 6030 or the counter electrode 6031 can be formedusing a conductive material having a light-transmitting property such asindium oxide containing tungsten oxide, indium zinc oxide containingtungsten oxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium tin oxide, indium zinc oxide, orindium tin oxide to which silicon oxide is added, for example.

In addition, a conductive composition containing a conductive highmolecule (also referred to as a conductive polymer) can be used forforming the pixel electrode 6030 and the counter electrode 6031. Thepixel electrode formed using the conductive composition preferably has asheet resistance of less than or equal to 10000 ohms per square and atransmittance of greater than or equal to 70% at a wavelength of 550 nm.Further, the resistivity of the conductive high molecule included in theconductive composition is preferably less than or equal to 0.1 Ω·cm.

As the conductive high molecule, a so-called π-electron conjugatedconductive polymer can be used. For example, polyaniline or a derivativethereof, polypyrrole or a derivative thereof, polythiophene or aderivative thereof, a copolymer of more than two kinds of thesematerials, and the like can be given.

Various signals and potentials are supplied from an FPC 6018 to thesignal line driver circuit 6003, which is separately formed, the scanline driver circuit 6004, or the pixel portion 6002.

Further, a connection terminal electrode 6015 is formed using the sameconductive film as the pixel electrode 6030 included in the liquidcrystal element 6013, and a terminal electrode 6016 is formed using thesame conductive film as gate electrodes of the TFTs 6010 and 6011.

Further, a semiconductor layer 6050 is provided over the terminalelectrode 6016. The semiconductor layer 6050 has a function as anelectrode of a capacitor included in a filter circuit.

The connection terminal electrode 6015 is electrically connected to aterminal included in the FPC 6018 through an anisotropic conductive film6019.

The liquid crystal panel illustrated in FIGS. 24A1, 24A2, and 24B has astructure in which the signal line driver circuit 6003 is separatelyformed and the signal line driver circuit 6003 is mounted on the firstsubstrate 6001. However, the present invention is not limited thereto.In the liquid crystal panel of Embodiment 4, the scan line drivercircuit may be formed separately and mounted, or only part of the signalline driver circuit or part of the scan line driver circuit may beformed separately and mounted.

A liquid crystal panel to which the semiconductor device, which is anembodiment of the present invention, is applied can be manufactured asillustrated in FIGS. 24A1, 24A2, and 24B as an example.

An example of a liquid crystal display module using the liquid crystalpanel is described with reference to FIG. 25. FIG. 25 illustrates anexample of a liquid crystal display module of Embodiment 4.

A liquid crystal display module illustrated in FIG. 25 has a structurein which a TFT substrate 2600 and a counter substrate 2601 are fixed toeach other with a sealant 2602, and a pixel portion 2603 including a TFTor the like, a display element 2604 including a liquid crystal layer,and a coloring layer 2605 are provided between the substrates to form adisplay region. The coloring layer 2605 is necessary to perform colordisplay. In the RGB system, respective coloring layers corresponding tocolors of red, green, and blue are provided for respective pixels. Theouter sides of the TFT substrate 2600 and the counter substrate 2601 areprovided with a polarizing plate 2606, a polarizing plate 2607, and adiffusing plate 2613. A light source includes a cold cathode tube 2610and a reflective plate 2611. A circuit board 2612 is connected to awiring circuit portion 2608 of the TFT substrate 2600 through a flexiblewiring board 2609. The circuit board 2612 includes an external circuitsuch as a control circuit and a power source circuit. The polarizingplate and the liquid crystal layer may be stacked with a retardationplate therebetween.

Thus, a liquid crystal display module can be formed using the liquidcrystal panel of Embodiment 4.

Note that the display device of Embodiment 4 includes a filter circuitprovided with a capacitor including an oxide semiconductor layer in aconnection portion with an FPC. Therefore, even in the case where avideo signal has noise, for example, adverse effects of the noise can bereduced. Further, even in the case where a glass substrate, a plasticsubstrate, or the like is used as a substrate in the display device ofEmbodiment 4, adverse effects of charge which is charged in thesubstrate can be reduced. The same can be said for the case of using,for example, a substrate, the size of which exceeds 3 m of the tenthgeneration.

Note that Embodiment 4 can be combined with any of Embodiments 1 to 3and Embodiments 5 and 6, as appropriate.

Embodiment 5

In Embodiment 5, electronic paper is described as an example of thedisplay device which is an embodiment of the present invention.

A semiconductor device which is an embodiment of the present inventioncan be applied to electronic paper. Electronic paper is also referred toas an electrophoretic display device (an electrophoretic display) andhas advantages of having high readability which is equivalent to normalpaper and lower power consumption than other display devices, and beingthin and lightweight.

Electrophoretic displays can have various modes. Electrophoreticdisplays contain a plurality of microcapsules dispersed in a solvent ora solute, each microcapsule containing first particles which arepositively charged and second particles which are negatively charged. Byapplying an electric field to the microcapsules, the particles in themicrocapsules move in opposite directions to each other and only thecolor of the particles gathering on one side is displayed. Note that thefirst particles and the second particles each contain pigment and do notmove without an electric field. Moreover, the first particles and thesecond particles have different colors (which may be colorless).

In this way, an electrophoretic display is a display that utilizes aso-called dielectrophoretic effect by which a substance that has a highdielectric constant moves to a region in which there is a high electricfield. An electrophoretic display does not need to use a polarizingplate or a counter substrate, which is required in a liquid crystaldisplay device, and both the thickness and weight of the electrophoreticdisplay device can be reduced to a half of those of a liquid crystaldisplay device.

A solution in which the above microcapsules are dispersed in a solventis referred to as electronic ink. This electronic ink can be printed ona surface of glass, plastic, cloth, paper, or the like. Furthermore, byusing a color filter or particles that have a pigment, color display canalso be achieved.

In addition, if a plurality of the above microcapsules is arranged asappropriate over an active matrix substrate so as to be interposedbetween two electrodes, an active matrix display device can becompleted, and display can be performed by application of an electricfield to the microcapsules.

Note that the first particles and the second particles in themicrocapsules may each be formed of a single material selected from aconductive material, an insulating material, a semiconductor material, amagnetic material, a liquid crystal material, a ferroelectric material,an electroluminescence material, an electrochromic material, and amagnetophoretic material, or formed using a composite material of any ofthese.

Next, a structure of electronic paper in Embodiment 5 is described withreference to FIG. 26. FIG. 26 is a cross-sectional view illustrating anexample of a structure of electronic paper in Embodiment 5.

The electronic paper illustrated in FIG. 26 includes a TFT 581 over asubstrate 580; an insulating layer 582, an insulating layer 583, and aninsulating layer 584 which are stacked over the TFT 581; an electrode587 which is in contact with a source electrode or a drain electrode ofthe TFT 581 through an opening portion provided in the insulating layers582 to 584; between the electrode 587 and an electrode 588 provided on asubstrate 596, spherical particles 589, each of which includes a blackregion 590 a, a white region 590 b, and in which a cavity 5904 filledwith liquid is included around the black region 590 a and the whiteregion 590 b; and a filler 595 provided around the spherical particles589.

The TFT 581 can be formed using a semiconductor device which is anembodiment of the present invention. In the electronic paper illustratedin FIG. 26, as an example, the semiconductor device having the structureillustrated in FIG. 16A is applied.

A method of using the spherical particles 589 is called a twisting balldisplay method. In the twisting ball display system, spherical particleseach colored in black and white are arranged between a first electrodeand a second electrode which are electrodes used for a display element,and potential difference is generated between the first electrode andthe second electrode to control orientation of the spherical particles;accordingly, display is performed.

Further, instead of the spherical element, an electrophoretic elementcan also be used. A microcapsule having a diameter of about 10 μm to 200μm in which transparent liquid, positively charged white microparticles,and negatively charged black microparticles are encapsulated, is used.In the microcapsule provided between the first electrode and the secondelectrode, when an electric field is applied by the first electrode andthe second electrode, the white microparticles and the blackmicroparticles move to opposite directions to each other, so that whiteor black can be displayed. A display element using this principle is anelectrophoretic display element. The electrophoretic display element hashigher reflectance than a liquid crystal display element, and thus, anauxiliary light is unnecessary, power consumption is low, and a displayportion can be recognized in a dim place. Further, even when power isnot supplied to the display portion, an image which has been displayedonce can be maintained. Accordingly, a displayed image can be storedeven if a semiconductor device having a display function (which maysimply be referred to as a display device or a semiconductor deviceprovided with a display device) is distanced from an electric wavesource.

As illustrated in FIG. 26 as an example, the electronic paper inEmbodiment 5 can include a capacitor formed using an oxide semiconductorlayer, a conductive layer forming a wiring or an electrode, and aninsulating layer provided between the oxide semiconductor layer and theconductive layer, as in the terminal portion described in aboveEmbodiments. The capacitor has a function as part of a protectioncircuit. The capacitor has a function as part of a filter circuit forreducing adverse effects of noise; therefore, also in the case wheresuch a capacitor is used for electronic paper, adverse effects on actualoperation can be similarly reduced, and adverse effects of noise can bereduced.

The electronic paper can be used in electronic appliances of variousfields, which display information. For example, the electronic paper canbe applied to e-book readers (electronic books), posters, advertisementson vehicles such as trains, or displays on a variety of cards such ascredit cards. An example of such an electronic appliance is illustratedin FIG. 27. FIG. 27 illustrates an example of an e-book reader ofEmbodiment 5.

As illustrated in FIG. 27, an e-book reader 2700 has two housings: ahousing 2701 and a housing 2703. The housing 2701 and the housing 2703are combined with a hinge 2711 so that the e-book reader 2700 can beopened and closed with the hinge 2711 as an axis. With such a structure,the e-book reader 2700 can operate like a paper book.

A display portion 2705 and a display portion 2707 are incorporated inthe housing 2701 and the housing 2703, respectively. The display portion2705 and the display portion 2707 may display different images, and forexample, may display a series of images. In the case where the displayportion 2705 and the display portion 2707 display different images, forexample, text can be displayed on a display portion on the right side(the display portion 2705 in FIG. 27) and graphics can be displayed on adisplay portion on the left side (the display portion 2707 in FIG. 27).

FIG. 27 illustrates an example in which the housing 2701 is providedwith an operation portion and the like. For example, the housing 2701 isprovided with a power switch 2721, an operation key 2723, a speaker2725, and the like. With the operation key 2723, pages can be turned.Note that a keyboard, a pointing device, and the like may be provided onthe same surface as the display portion of the housing. Furthermore, anexternal connection terminal (an earphone terminal, a USB terminal, aterminal that can be connected to various cables such as an AC adapterand a USB cable, or the like), a recording medium insertion portion, andthe like may be provided on the back surface or the side surface of thehousing. Moreover, the e-book reader 2700 may have a function of anelectronic dictionary.

The e-book reader 2700 may have a configuration capable of wirelesslytransmitting and receiving data. Through wireless communication, desiredbook data or the like can be purchased and downloaded from an e-bookserver.

Note that Embodiment 5 can be combined with any of Embodiments 1 to 4and Embodiment 6, as appropriate.

Embodiment 6

In Embodiment 6, electronic appliances each provided with a displaydevice which is an embodiment of the present invention for a displayportion is described.

Examples of a structure of an electronic appliance of Embodiment 6 aredescribed with reference to FIGS. 28A and 28B, FIGS. 29A and 29B, andFIGS. 30A and 30B. FIGS. 28A and 28B, FIGS. 29A and 29B, and FIGS. 30Aand 30B each illustrate an example of a structure of an electronicappliance of Embodiment 6.

A display device which is an embodiment of the present invention can beapplied to a variety of electronic appliances (including game machines).Examples of electronic appliances are a television device (also referredto as a television or a television receiver), a monitor of a computer orthe like, a camera such as a digital camera or a digital video camera, adigital photo frame, a mobile phone (also referred to as a mobiletelephone or a mobile phone device), a portable game console, a portableinformation terminal, an audio reproducing device, a large-sized gamemachine such as a pachinko machine, and the like.

FIG. 28A illustrates an example of a television set. In the televisionset 9600, a display portion 9603 is incorporated in a housing 9601. Thedisplay portion 9603 can display images. Here, the housing 9601 issupported by a stand 9605.

The television set 9600 can be operated with an operation switch of thehousing 9601 or a separate remote controller 9610. Channels and volumecan be controlled with an operation key 9609 of the remote controller9610 so that an image displayed on the display portion 9603 can becontrolled. Furthermore, the remote controller 9610 may be provided witha display portion 9607 for displaying data outputted from the remotecontroller 9610. For example, the housing 9601 may have alight-transmitting property by using the display device of any of aboveEmbodiments for the display portion 9603.

Note that the television set 9600 is provided with a receiver, a modem,and the like. With the use of the receiver, general televisionbroadcasting can be received. Moreover, when the display device isconnected to a communication network with or without wires via themodem, one-way (from a sender to a receiver) or two-way (between asender and a receiver or between receivers) information communicationcan be performed.

FIG. 28B illustrates an example of a digital photo frame. For example,in a digital photo frame 9700, a display portion 9703 is incorporated ina housing 9701. The display portion 9703 can display a variety ofimages. For example, the display portion 9703 can display data of animage taken with a digital camera or the like and function as a normalphoto frame.

Note that the digital photo frame 9700 is provided with an operationportion, an external connection portion (a USB terminal, a terminal thatcan be connected to various cables such as a USB cable, or the like), arecording medium insertion portion, and the like. Although thesecomponents may be provided on the surface on which the display portionis provided, it is preferable to provide them on the side surface or theback surface for the design of the digital photo frame 9700. Forexample, a memory storing data of an image taken with a digital camerais inserted in the recording medium insertion portion of the digitalphoto frame, whereby the image data can be transferred and thendisplayed on the display portion 9703.

The digital photo frame 9700 may be configured to transmit and receivedata wirelessly. The structure may be employed in which desired imagedata is transferred wirelessly to be displayed.

FIG. 29A is a portable game machine and includes two housings, a housing9881 and a housing 9891, which are connected with a joint portion 9893so that the portable game machine can be opened or folded. A displayportion 9882 and a display portion 9883 are incorporated in the housing9881 and the housing 9891, respectively. Moreover, the portable gamemachine illustrated in FIG. 29A is provided with a speaker portion 9884,a recording medium insertion portion 9886, an LED lamp 9890, input means(operation keys 9885, a connection terminal 9887, a sensor 9888 (havinga function of measuring force, displacement, position, speed,acceleration, angular velocity, rotation number, distance, light,liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, current, voltage, electric power, radial ray,flow rate, humidity, gradient, vibration, odor, or infrared ray), and amicrophone 9889), and the like. It is needless to say that the structureof the portable game machine is not limited to that described above. Theportable game machine may have a structure in which additional accessoryequipment is provided as appropriate as long as at least a displaydevice is provided. The portable game machine in FIG. 29A has a functionof reading a program or data stored in a recording medium to display iton the display portion, and a function of sharing information withanother portable game machine by wireless communication. Note that afunction of the portable game machine illustrated in FIG. 29A is notlimited to those described above, and the portable game machine can havea variety of functions.

FIG. 29B illustrates an example of a slot machine which is a large-sizedgame machine. In the slot machine 9900, a display portion 9903 isincorporated in a housing 9901. In addition, the slot machine 9900includes an operation means such as a start lever or a stop switch, acoin slot, a speaker, and the like. Needless to say, the structure ofthe slot machine 9900 is not limited to the above structure. The slotmachine may have a structure in which additional accessory equipment isprovided as appropriate as long as at least the display device accordingto the present invention is provided.

FIG. 30A illustrates an example of a mobile phone. A mobile phone 9000is provided with a display portion 9002 incorporated into a housing9001, an operation button 9003, an external connection port 9004, aspeaker 9005, a microphone 9006, and the like.

When the display portion 9002 of the mobile phone 9000 illustrated inFIG. 30A is touched with a finger or the like, data can be input intothe mobile phone 9000. Users can make a call or text messaging bytouching the display portion 9002 with their fingers or the like.

There are mainly three screen modes of the display portion 9002. Thefirst mode is a display mode mainly for displaying an image. The secondmode is an input mode mainly for inputting data such as text. The thirdmode is a display-and-input mode in which two modes of the display modeand the input mode are combined.

For example, in the case of making a call or texting, a text input modemainly for inputting text is selected for the display portion 9002 sothat characters displayed on a screen can be input. In that case, it ispreferable to display a keyboard or number buttons on almost all thearea of the screen of the display portion 9002.

When a detection device including a sensor for detecting inclination,such as a gyroscope or an acceleration sensor, is provided inside themobile phone 9000, display on the screen of the display portion 9002 canbe automatically changed by determining the orientation of the mobilephone 9000 (whether the mobile phone 9000 stands upright or is laid downon its side).

The screen modes are changed by touching the display portion 9002 orusing the operation buttons 9003 of the housing 9001. Alternatively, thescreen modes may be changed depending on the kind of the image displayedon the display portion 9002. For example, when a signal of an imagedisplayed on the display portion is a signal of moving image data, thescreen mode is switched to the display mode. When the signal is a signalof text data, the screen mode is switched to the input mode.

Further, in the input mode, when input by touching the display portion9002 is not performed for a certain period while a signal detected by anoptical sensor in the display portion 9002 is detected, the screen modemay be controlled so as to be changed from the input mode to the displaymode.

The display portion 9002 can also function as an image sensor. Forexample, an image of a palm print, a fingerprint, or the like is takenwhen the display portion 9002 is touched with a palm or a finger,whereby personal identification can be performed. Further, by providinga backlight or a sensing light source which emits a near-infrared lightin the display portion, an image of a finger vein, a palm vein, or thelike can be taken.

FIG. 30B also illustrates an example of a mobile phone. The mobile phoneillustrated in FIG. 30B is provided with a display device 9410 having adisplay portion 9412 and operation buttons 9413 in a housing 9411 and acommunication device 9400 having operation buttons 9402, an externalinput terminal 9403, a microphone 9404, a speaker 9405, and alight-emitting portion 9406 which emits light when receiving a call in ahousing 9401. The display device 9410 having a display function can bedetached from or attached to the communication device 9400 having atelephone function in two directions indicated by arrows. Accordingly,the display device 9410 and the communication device 9400 can beattached to each other along respective short axes or long axes. Whenonly the display function is needed, the display device 9410 can bedetached from the communication device 9400 and used alone. Thecommunication device 9400 and the display device 9410 can transmit andreceive images or input information to/from each other by wirelesscommunication or wired communication, and each of the communicationdevice 9400 and the display device 9410 has a rechargeable battery.

As described above as examples, the display device which is anembodiment of the present invention can be used for a variety ofelectronic appliances. Further, mounting of the display device which isan embodiment of the present invention can improve reliability of anelectronic appliance.

Further, the display device which is an embodiment of the presentinvention is used for a display portion. Accordingly, even in the casewhere a housing has a light-transmitting property, reduction of alight-transmitting property can be suppressed. Moreover, even in thecase where a housing has a light-transmitting property, overlap betweena conductive layer and an oxide semiconductor layer in a plane view cansuppress deterioration of the oxide semiconductor layer due to lightincidence.

Note that Embodiment 6 can be combined with any of Embodiments 1 to 5,as appropriate.

This application is based on Japanese Patent Application serial no.2009-078084 filed with Japan Patent Office on Mar. 27, 2009, the entirecontents of which are hereby incorporated by reference.

1. A method for manufacturing a display device comprising the steps of:forming a first conductive film over a substrate; selectively etchingthe first conductive film to form a first conductive layer and a secondconductive layer; forming a first insulating layer over the firstconductive layer and the second conductive layer; selectively etchingthe first insulating layer to expose part of the first conductive layer;forming a second conductive film over the first insulating layer;selectively etching the second conductive film to form a thirdconductive layer and a fourth conductive layer, wherein the thirdconductive layer and the fourth conductive layer overlap with the secondconductive layer; forming an oxide semiconductor film over the firstinsulating layer with the third conductive layer and the fourthconductive layer interposed therebetween; selectively etching the oxidesemiconductor film to form a first oxide semiconductor layer and asecond oxide semiconductor layer, wherein the second oxide semiconductorlayer overlaps with the second conductive layer and is in contact withthe third conductive layer and the fourth conductive layer; forming asecond insulating layer over the first oxide semiconductor layer and thesecond oxide semiconductor layer; selectively etching the secondinsulating layer to expose part of the first conductive layer and partof the fourth conductive layer; and forming a third conductive film overthe exposed part of the first conductive layer, the exposed part of thefourth conductive layer, and the second insulating layer; andselectively etching the third conductive film to form a fifth conductivelayer which is electrically connected to the first conductive layer andhas a function as a terminal electrode and to form a sixth conductivelayer electrically connected to the fourth conductive layer.
 2. Themethod for manufacturing a display device, according to claim 1, whereinthe first oxide semiconductor layer is formed over the first conductivelayer with the first insulating layer interposed therebetween.
 3. Themethod for manufacturing a display device, according to claim 1, whereinthe terminal electrode is formed over the first oxide semiconductorlayer with the second insulating layer interposed therebetween.
 4. Amethod for manufacturing a semiconductor device comprising the steps of:forming a first conductive layer and a second conductive layer; forminga first insulating layer over the first conductive layer and the secondconductive layer; forming a third conductive layer and a fourthconductive layer over the first insulating layer; forming an oxidesemiconductor film over the first insulating layer; selectively etchingthe oxide semiconductor film to form a first oxide semiconductor layerand a second oxide semiconductor layer over the first insulating layer,wherein the first oxide semiconductor layer overlaps with the firstconductive layer, and the second oxide semiconductor layer overlaps withthe second conductive layer; forming a second insulating layer over thefirst oxide semiconductor layer and the second oxide semiconductorlayer; and forming a fifth conductive layer and a sixth conductive layerover the second insulating layer, wherein the fifth conductive layercontacts the first conductive layer through openings of the firstinsulating layer and the second insulating layer, and the sixthconductive layer contacts one of the third conductive layer and thefourth conductive layer through an opening of the second insulatinglayer, wherein the second oxide semiconductor layer is in electricalcontact with the third conductive layer and the fourth conductive layer.5. The method according to claim 4, wherein the third conductive layerand the fourth conductive layer overlap with the second conductivelayer.
 6. The method according to claim 4, wherein the third conductivelayer and the fourth conductive layer are located below the second oxidesemiconductor layer.
 7. The method according to claim 4, wherein thefifth conductive layer is located in a terminal portion of thesemiconductor device.
 8. A method for manufacturing a semiconductordevice comprising: forming a first conductive layer and a secondconductive layer over a substrate; forming a first insulating layer overthe first conductive layer and the second conductive layer; forming anoxide semiconductor layer over the first insulating layer, wherein theoxide semiconductor layer continuously extends over the first conductivelayer and the second conductive layer; forming a second insulating layerover the oxide semiconductor layer; forming a third conductive layer anda fourth conductive layer over the second insulating layer, wherein thethird conductive layer, the first conductive layer and the oxidesemiconductor layer overlap with each other; wherein the fourthconductive layer, the second conductive layer and the oxidesemiconductor layer overlap with each other; wherein the thirdconductive layer contacts the first conductive layer through openings ofthe first insulating layer and the second insulating layer; and whereinthe fourth conductive layer contacts the second conductive layer throughopenings of the first insulating layer and the second insulating layer.